Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si

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	Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si
	Zhang, TC ; Guo, Y ; Mei, ZX ; Gu, CZ ; Du, XL
刊名	APPLIED PHYSICS LETTERS
	2009
卷号	94 期号:11
关键词	ZNO
ISSN号	0003-6951
通讯作者	Zhang, TC (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要	Exploiting a double heterojunction of n-ZnO/insulator-MgO/p-Si grown by molecular beam epitaxy, a visible-blind ultraviolet (UV) photodetector has been fabricated. The photodetector shows a rectification ratio of similar to 10(4) at +/- 2 V and a dark current of 0.5 nA at a reverse bias of -2 V.The photoresponse spectrum indicates a visible-blind UV detectivity of our devices with a sharp cut off at the wavelength of 378 nm and a high UV/visible rejection ratio. The key role of the middle insulating MgO layer, as a barrier layer for minority carrier transport, has been demonstrated.
收录类别	SCI
资助信息	National Science Foundation [50532090, 10804126, 10604007, 60606023, 60621091]; Ministry of Science and Technology of China [2007CB936203, 2009CB929400]
语种	英语
公开日期	2013-09-23
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/46555]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Zhang, TC,Guo, Y,Mei, ZX,et al. Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si[J]. APPLIED PHYSICS LETTERS,2009,94(11).
APA	Zhang, TC,Guo, Y,Mei, ZX,Gu, CZ,&Du, XL.(2009).Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si.APPLIED PHYSICS LETTERS,94(11).
MLA	Zhang, TC,et al."Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si".APPLIED PHYSICS LETTERS 94.11(2009).