Transition films from amporphous to microcrystalline silicon and solar cells

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	Transition films from amporphous to microcrystalline silicon and solar cells
	Hao, HY ; Kong, GL ; Zeng, XB ; Xu, Y ; Diao, HW ; Liao, XB
刊名	ACTA PHYSICA SINICA
	2005
卷号	54 期号:7 页码:3327
关键词	OPEN-CIRCUIT VOLTAGE AMORPHOUS-SILICON ABSORPTION SCATTERING
ISSN号	1000-3290
通讯作者	Hao, HY (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China.
中文摘要	A series of hydrogenated silicon films near the threshold of crystallinity was prepared by very high frequency plasmaenhanced chemical vapor deposition (VHF-PECVD)from a mixture of SiH4 diluted in H-2. The effect of hydrogen dilution ratios R = [H-2]/[SiH4] on the microstructure of the films was investigated. The photoelectronic properties and stability of the films were studied as a function of crystalline fraction. The results show that the diphasic films gain both the fine photoelectric properties like a-Si: H and high stability like mu w-Si:H. By using the diphasic silicon films as the intrinsic layer, p-i-n junction solar cells were prepared. Current-voltage (J-V) characteristics and stability of the solar cells were measured under an AM1.5 solar simulator. We observed a light-induced increase of 5.2% in the open-circuit voltage (V-oc) and a light-induced degradation of similar to 2.9% inefficiency.
收录类别	SCI
语种	中文
公开日期	2013-09-23
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/46031]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Hao, HY,Kong, GL,Zeng, XB,et al. Transition films from amporphous to microcrystalline silicon and solar cells[J]. ACTA PHYSICA SINICA,2005,54(7):3327.
APA	Hao, HY,Kong, GL,Zeng, XB,Xu, Y,Diao, HW,&Liao, XB.(2005).Transition films from amporphous to microcrystalline silicon and solar cells.ACTA PHYSICA SINICA,54(7),3327.
MLA	Hao, HY,et al."Transition films from amporphous to microcrystalline silicon and solar cells".ACTA PHYSICA SINICA 54.7(2005):3327.