Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

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	Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy
	Song, CL ; Wang, YL ; Jiang, YP ; Zhang, Y ; Chang, CZ ; Wang, LL ; He, K ; Chen, X ; Jia, JF ; Wang, YY ; Fang, Z ; Dai, X ; Xie, XC ; Qi, XL ; Zhang, SC ; Xue, QK ; Ma, XC
刊名	APPLIED PHYSICS LETTERS
	2010
卷号	97 期号:14
关键词	SINGLE DIRAC CONE SURFACE BI2TE3
ISSN号	0003-6951
通讯作者	Xue, QK (reprint author), Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China.
中文摘要	Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0 +/- 0.2X10(11)/cm(2), and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement. (C) 2010 American Institute of Physics. [doi:10.1063/1.3494595]
收录类别	SCI
资助信息	National Science Foundation [10721404]; Ministry of Science and Technology of China [2009CB929400]; Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-AC02-76SF00515]
语种	英语
公开日期	2013-09-23
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/45977]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Song, CL,Wang, YL,Jiang, YP,et al. Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy[J]. APPLIED PHYSICS LETTERS,2010,97(14).
APA	Song, CL.,Wang, YL.,Jiang, YP.,Zhang, Y.,Chang, CZ.,...&Ma, XC.(2010).Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy.APPLIED PHYSICS LETTERS,97(14).
MLA	Song, CL,et al."Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy".APPLIED PHYSICS LETTERS 97.14(2010).