Thin film transistors fabricated by in situ growth of SnO2 nanobelts on Au/Pt electrodes | |
Li, QH ; Chen, YJ ; Wan, Q ; Wang, TH | |
刊名 | APPLIED PHYSICS LETTERS
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2004 | |
卷号 | 85期号:10页码:1805 |
关键词 | NANOWIRES TRANSPORT MOBILITY |
ISSN号 | 0003-6951 |
通讯作者 | Wang, TH (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
中文摘要 | Thin film transistors are fabricated by in situ growth of SnO2 nanobelts on Au/Pt electrodes. A linear correlation in the output characteristics is observed at zero gate voltage, indicating Ohmic contacts between the nanobelts and the electrodes. The transistors exhibit n-type behaviors and have a mobility of 1.85 cm(2)/V s with a current on/off ratio above 10(3). The conductance increases as the pressure in the device chamber is reduced, which indicates that the transistors are promising for oxygen detecting. (C) 2004 American Institute of Physics. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-23 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/45837] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Li, QH,Chen, YJ,Wan, Q,et al. Thin film transistors fabricated by in situ growth of SnO2 nanobelts on Au/Pt electrodes[J]. APPLIED PHYSICS LETTERS,2004,85(10):1805. |
APA | Li, QH,Chen, YJ,Wan, Q,&Wang, TH.(2004).Thin film transistors fabricated by in situ growth of SnO2 nanobelts on Au/Pt electrodes.APPLIED PHYSICS LETTERS,85(10),1805. |
MLA | Li, QH,et al."Thin film transistors fabricated by in situ growth of SnO2 nanobelts on Au/Pt electrodes".APPLIED PHYSICS LETTERS 85.10(2004):1805. |
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