The study of H+ ion bombardment on the surface of diamond grains

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	The study of H+ ion bombardment on the surface of diamond grains
	Gu, CZ ; Jiang, X ; Jin, ZS
刊名	SURFACE & COATINGS TECHNOLOGY
	2002
卷号	158 页码:388
关键词	GROWTH FILMS SILICON
ISSN号	0257-8972
通讯作者	Gu, CZ (reprint author), Chinese Acad Sci, State Key Lab Surface Phys, Inst Phys, Beijing 100080, Peoples R China.
中文摘要	Diamond was nucleated on mirror-polished silicon substrate by the bias-enhanced nucleation (BEN) method and grown by microwave-plasma chemical vapor deposition (MWPCVD) technology. The H+ ion beam was formed by applying negative potential to the substrate. Repeated bombardment and growth processes were performed on the diamond grains. Changes in morphology, and etching and growth rates for the diamond grains were locally studied by scanning electron microscopy (SEM). The results showed that the area of (001) facets for a (001)-textured diamond grain obviously increased. Mechanisms for etching and growth of the diamond grains are suggested. This work describes a method for obtaining high-quality and large-area (001)oriented diamond thin film and adds to the understanding of the balanced process of etching and growth during CVD diamond deposition under ion bombardment. (C) 2002 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-23
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/45529]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Gu, CZ,Jiang, X,Jin, ZS. The study of H+ ion bombardment on the surface of diamond grains[J]. SURFACE & COATINGS TECHNOLOGY,2002,158:388.
APA	Gu, CZ,Jiang, X,&Jin, ZS.(2002).The study of H+ ion bombardment on the surface of diamond grains.SURFACE & COATINGS TECHNOLOGY,158,388.
MLA	Gu, CZ,et al."The study of H+ ion bombardment on the surface of diamond grains".SURFACE & COATINGS TECHNOLOGY 158(2002):388.