THE MOVPE GROWTH AND CHARACTERIZATION OF HG1-XMNXTE

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	THE MOVPE GROWTH AND CHARACTERIZATION OF HG1-XMNXTE
	FUNAKI, M ; LEWIS, JE ; HALLAM, TD ; LI, CR ; HALDER, SK ; BRINKMAN, AW ; TANNER, BK
刊名	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
	1993
卷号	8 期号:1 页码:S200
关键词	MOLECULAR-BEAM EPITAXY MIXED-CRYSTALS MANGANESE TELLURIDE
ISSN号	0268-1242
通讯作者	FUNAKI, M (reprint author), UNIV DURHAM,DEPT PHYS,DURHAM DH1 3LE,ENGLAND.
中文摘要	We report the influence of growth conditions and substrate type on the quality of Hg1-xMnxTe (MMT) epitaxial layers. MMT epitaxial layers were grown using di-isopropyl telluride (DIPTe), tricarbonyl methylcyclopentadienyl manganese (TCMn) and elemental Hg in a horizontal atmospheric-pressure MOVPE reactor. Mn concentration depends strongly on both growth temperature and position of the substrate on the susceptor. This is primarily due to the large difference in pyrolysis characteristics between the DIPTe and TCMn precursors. Epitaxial growth was possible up to x approximately 0.8 but high growth temperature led to polycrystalline deposition. Investigation of the morphology and crystallinity of the epitaxial layers on GaAs (100), (Cd, Zn)Te (100) 2-degrees) off to nearest (110), (211)B and (111)B substrates revealed that (Cd, Zn)Te (100) 2-degrees off to nearest (110) substrate was the most suitable of all tested substrates. The room-temperature reflectance and transmission spectra over the wavelength range 0.3-30 mum were taken. Thicknesses of the films have been estimated from the interference fringe peaks near 20 mum. The optical transition LAMBDA4,5v - LAMBDA6c (the E1 peak) and its doublet (the E1 + DELTA1 peak), the absorption edge in transmission, and the behaviour of the interference extrema with Mn composition have been examined.
收录类别	SCI
语种	英语
公开日期	2013-09-23
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/45352]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	FUNAKI, M,LEWIS, JE,HALLAM, TD,et al. THE MOVPE GROWTH AND CHARACTERIZATION OF HG1-XMNXTE[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,1993,8(1):S200.
APA	FUNAKI, M.,LEWIS, JE.,HALLAM, TD.,LI, CR.,HALDER, SK.,...&TANNER, BK.(1993).THE MOVPE GROWTH AND CHARACTERIZATION OF HG1-XMNXTE.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,8(1),S200.
MLA	FUNAKI, M,et al."THE MOVPE GROWTH AND CHARACTERIZATION OF HG1-XMNXTE".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 8.1(1993):S200.