The growth mechanism of pulsed laser deposited and DC magnetron sputtered high T-c YBa2Cu3O7 thin films

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	The growth mechanism of pulsed laser deposited and DC magnetron sputtered high T-c YBa2Cu3O7 thin films
	Liu, JZ ; Li, L
刊名	PHYSICA C
	1997
卷号	282 页码:549
ISSN号	0921-4534
通讯作者	Liu, JZ (reprint author), CHINESE ACAD SCI,INST PHYS,STATE KEY LAB SUPERCONDUCT,POB 603,BEIJING 100080,PEOPLES R CHINA.
中文摘要	The investigation of growth mechanism of pulsed laser deposition (PLD) and magnetron sputtered high T-c YBa2Cu3O7(YBCO) thin films were carried out by atomic force microscopy(AFM). Observations showed that the nucleation and growth of the YBCO thin films have the customary island and coalescence mode. For PLD films, both screw dislocation islands and terrace islands occurred, but for the magnetron sputtered thin films only. screw dislocation islands were present. All the islands consist of many steps with a height of one or multiple c-axis unit cell, which indicated that the film grow unit cell by unit cell.
收录类别	SCI
语种	英语
公开日期	2013-09-23
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/45189]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Liu, JZ,Li, L. The growth mechanism of pulsed laser deposited and DC magnetron sputtered high T-c YBa2Cu3O7 thin films[J]. PHYSICA C,1997,282:549.
APA	Liu, JZ,&Li, L.(1997).The growth mechanism of pulsed laser deposited and DC magnetron sputtered high T-c YBa2Cu3O7 thin films.PHYSICA C,282,549.
MLA	Liu, JZ,et al."The growth mechanism of pulsed laser deposited and DC magnetron sputtered high T-c YBa2Cu3O7 thin films".PHYSICA C 282(1997):549.