The growth and thermal stability of Ti-silicides obtained by metal vapor vacuum arc ion source implantation

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	The growth and thermal stability of Ti-silicides obtained by metal vapor vacuum arc ion source implantation
	Wang, SB ; Liang, H ; Zhu, PR
刊名	PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
	2000
卷号	179 期号:1 页码:95
关键词	THIN-FILMS SI
ISSN号	0031-8965
通讯作者	Wang, SB (reprint author), Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China.
中文摘要	(100) and (111) oriented Si wafers were implanted with 45 keV, 5 x 10(17) cm(-2) Ti ions at various beam currents. X-ray diffraction (XRD) patterns show that there are different initial silicides such as C49 TiSi2 and Ti5Si3 on various wafers. While annealing was carried out at higher temperatures, both C49 TiSi2 and Ti5Si3 transform into C54 TiSi2. However, it is noted that C54 TiSi2 indicates different preferential orientations on two kinds of wafers. The change of sheet resistance with annealing temperature reflects that the disilicide is more stable than those obtained by solid phase reaction. It is also valuable to find that Ti atomic profiles show only small changes For various anneals.
收录类别	SCI
语种	英语
公开日期	2013-09-23
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/45187]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wang, SB,Liang, H,Zhu, PR. The growth and thermal stability of Ti-silicides obtained by metal vapor vacuum arc ion source implantation[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,2000,179(1):95.
APA	Wang, SB,Liang, H,&Zhu, PR.(2000).The growth and thermal stability of Ti-silicides obtained by metal vapor vacuum arc ion source implantation.PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,179(1),95.
MLA	Wang, SB,et al."The growth and thermal stability of Ti-silicides obtained by metal vapor vacuum arc ion source implantation".PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 179.1(2000):95.