The formation of Ti-silicides by a metal vapour vacuum are ion source implantation and annealing process

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	The formation of Ti-silicides by a metal vapour vacuum are ion source implantation and annealing process
	Wang, SB ; Zhu, PR
刊名	VACUUM
	2000
卷号	59 期号:4 页码:919
关键词	THIN-FILMS
ISSN号	0042-207X
通讯作者	Zhu, PR (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要	Both (0 0 1) and (1 1 I) oriented Si wafers were implanted with Ti ions to 5 x 10(17)ions/cm(2). Under various beam currents, X-ray diffraction (XRD) patterns show that there are different initial silicides created. The formation of C49 TiSi2 and/or Ti5Si3 depends on beam currents and orientations of substrates. When larger beam current was used, C49 TiSi2 and/or Ti5Si3 transformed into C54 TiSi2. Therefore, the sheet resistance could be reduced. Anneals increase the phase transformation and the C54 TiSi2 grows with preferential orientations. Different orientation relationships are found on two kinds of wafers. Moreover, it is noted that Ti atomic profile has only a small change after annealing. (C) 2000 Elsevier Science Ltd. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-23
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/45170]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wang, SB,Zhu, PR. The formation of Ti-silicides by a metal vapour vacuum are ion source implantation and annealing process[J]. VACUUM,2000,59(4):919.
APA	Wang, SB,&Zhu, PR.(2000).The formation of Ti-silicides by a metal vapour vacuum are ion source implantation and annealing process.VACUUM,59(4),919.
MLA	Wang, SB,et al."The formation of Ti-silicides by a metal vapour vacuum are ion source implantation and annealing process".VACUUM 59.4(2000):919.