The fabrication and characteristics of (Ba0.5Sr0.5)TiO3 thin films prepared by pulsed laser deposition

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	The fabrication and characteristics of (Ba0.5Sr0.5)TiO3 thin films prepared by pulsed laser deposition
	Yang, GA ; Gu, HS ; Zhu, J ; Wang, YQ
刊名	JOURNAL OF CRYSTAL GROWTH
	2002
卷号	242 期号:1-2 页码:172
关键词	ACCESS MEMORY APPLICATIONS ELECTRICAL-PROPERTIES DIELECTRIC-PROPERTIES CAPACITORS (BA
ISSN号	0022-0248
通讯作者	Yang, GA (reprint author), Chinese Acad Sci, Inst Phys, Lab Opt Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要	The fabrication and characteristics of (Ba0.5Sr0.5)Ti-0.3 (BST) thin films prepared by sputtering (Ba0.5Sr0.5)TiO3 targets were investigated. The laser-deposited BST films were grown on Si (100) substrates at 700degreesC under an oxygen pressure of 0.1 Pa. The capacitance-voltage behavior of metal-insulator metal structures and their leakage current characteristics were studied. The results showed that the dielectric constant of 40 nm thick BST films was 150, and the dissipation factor was 0.035 at 1 MHz. The leakage current density was 2 x 10(-9) A/cm(2) at 2V. The high dielectric constant, low dielectric loss, and low leakage current show the potential of (Ba0.5Sr0.5)TiO3 thin films for integrated capacitors and high-density dynamic random access memories. (C) 2002 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-23
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/45146]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Yang, GA,Gu, HS,Zhu, J,et al. The fabrication and characteristics of (Ba0.5Sr0.5)TiO3 thin films prepared by pulsed laser deposition[J]. JOURNAL OF CRYSTAL GROWTH,2002,242(1-2):172.
APA	Yang, GA,Gu, HS,Zhu, J,&Wang, YQ.(2002).The fabrication and characteristics of (Ba0.5Sr0.5)TiO3 thin films prepared by pulsed laser deposition.JOURNAL OF CRYSTAL GROWTH,242(1-2),172.
MLA	Yang, GA,et al."The fabrication and characteristics of (Ba0.5Sr0.5)TiO3 thin films prepared by pulsed laser deposition".JOURNAL OF CRYSTAL GROWTH 242.1-2(2002):172.