The effect of boron ion implantation and annealing on the microstructure and electrical characteristics of the diamond films

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	The effect of boron ion implantation and annealing on the microstructure and electrical characteristics of the diamond films
	Zhang, HX ; Jiang, YB ; Meng, QB ; Fei, YJ ; Zhu, PR ; Lin, ZD ; Feng, KA
刊名	APPLIED SURFACE SCIENCE
	1999
卷号	150 期号:1-4 页码:43
ISSN号	0169-4332
通讯作者	Jiang, YB (reprint author), Chinese Acad Sci, State Key Lab Surface Phys, POB 8740-294, Beijing 100080, Peoples R China.
中文摘要	Diamond films were doped by boron ion-implantation with the energy of 120 keV. The implantation dose ranged from 10(14) to 10(17) cm(-2). After the implantation, the diamond films were annealed at different temperatures (600-750 degrees C) for different times (2-15 min). Scanning Electronic Microscope, Raman and Secondary Ion Mass-spectrum were used to investigate the effect of boron ion implantation and annealing on the microstructure of the diamond films. The electrical resistivities of the diamond films were also measured. It was found that the best dose of boron ion-implantation into the diamond film was around 10(16) cm(-2). The appropriate annealing temperature and time was 700 degrees C and 2-5 min, respectively. After implantation, the resistivities were reduced to 0.1 Omega cm (almost nine orders lower than the unimplanted diamond films). These results show that boron ion implantation can be an effective way to fabricate P-type diamond films. (C) 1999 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-23
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/45013]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Zhang, HX,Jiang, YB,Meng, QB,et al. The effect of boron ion implantation and annealing on the microstructure and electrical characteristics of the diamond films[J]. APPLIED SURFACE SCIENCE,1999,150(1-4):43.
APA	Zhang, HX.,Jiang, YB.,Meng, QB.,Fei, YJ.,Zhu, PR.,...&Feng, KA.(1999).The effect of boron ion implantation and annealing on the microstructure and electrical characteristics of the diamond films.APPLIED SURFACE SCIENCE,150(1-4),43.
MLA	Zhang, HX,et al."The effect of boron ion implantation and annealing on the microstructure and electrical characteristics of the diamond films".APPLIED SURFACE SCIENCE 150.1-4(1999):43.