The effect of an interfacial layer on the relaxation of CdMnTe/CdTe multiple quantum well structures on InSb substrates

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	The effect of an interfacial layer on the relaxation of CdMnTe/CdTe multiple quantum well structures on InSb substrates
	Li, CR ; Tanner, BK ; Ashenford, DE ; Hogg, JHC ; Lunn, B
刊名	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
	1998
卷号	13 期号:7 页码:746
关键词	MBE GROWTH CDTE HETEROSTRUCTURES
ISSN号	0268-1242
通讯作者	Li, CR (reprint author), Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China.
中文摘要	CdMnTe/CdTe multiple quantum well structures on InSb substrates have been investigated by means of high-resolution x-ray diffraction and topography. Simulation of the high-resolution x-ray diffraction profiles provided evidence of an interfacial layer at the interface between the InSb substrate and CdTe buffer layer. The topographs reveal the presence of misfit dislocations only in the sample with a thicker interfacial layer. We show theoretically that an In2Te3 interfacial layer will significantly affect the critical thickness for misfit dislocation generation. We confirm experimentally that only the sample with the thicker interface layer exceeds the critical thickness.
收录类别	SCI
语种	英语
公开日期	2013-09-23
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/45008]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Li, CR,Tanner, BK,Ashenford, DE,et al. The effect of an interfacial layer on the relaxation of CdMnTe/CdTe multiple quantum well structures on InSb substrates[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,1998,13(7):746.
APA	Li, CR,Tanner, BK,Ashenford, DE,Hogg, JHC,&Lunn, B.(1998).The effect of an interfacial layer on the relaxation of CdMnTe/CdTe multiple quantum well structures on InSb substrates.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,13(7),746.
MLA	Li, CR,et al."The effect of an interfacial layer on the relaxation of CdMnTe/CdTe multiple quantum well structures on InSb substrates".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 13.7(1998):746.