Te distribution in space grown GaSb

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	Te distribution in space grown GaSb
	Voloshin, AE ; Nishinaga, T ; Ge, P ; Huo, C
刊名	JOURNAL OF CRYSTAL GROWTH
	2002
卷号	234 期号:1 页码:12
关键词	BRIDGMAN GROWTH MICROGRAVITY SOLIDIFICATION STRIATION
ISSN号	0022-0248
通讯作者	Voloshin, AE (reprint author), Russian Acad Sci, AV Shubnikov Crystallog Inst, Leninsky Prosp, Moscow 117333, Russia.
中文摘要	Inhomogeneity of a space grown crystal of Te-doped GaSb has been studied by the quantitative plane wave X-ray topography. The crystal is free of striations, whereas Te distribution over its cross section is noticeably nonuniform. A region formed by the advancement of a facet, which was present at the growth front, is revealed. This region is enriched with Te and contains several striations, at one of which a twin originates. Possible reasons for a nonuniform Te incorporation, growth-front faceting, and twinning are discussed. The conditions for growing high-quality crystals by the Bridgman method in space are suggested. These are (1) a reasonably small clearance between the growing crystal and the ampoule wall and (2) no growth-front faceting. (C) 2002 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-23
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/44723]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Voloshin, AE,Nishinaga, T,Ge, P,et al. Te distribution in space grown GaSb[J]. JOURNAL OF CRYSTAL GROWTH,2002,234(1):12.
APA	Voloshin, AE,Nishinaga, T,Ge, P,&Huo, C.(2002).Te distribution in space grown GaSb.JOURNAL OF CRYSTAL GROWTH,234(1),12.
MLA	Voloshin, AE,et al."Te distribution in space grown GaSb".JOURNAL OF CRYSTAL GROWTH 234.1(2002):12.