Metallic oxide p-I-n junctions with ferroelectric as the barrier

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	Metallic oxide p-I-n junctions with ferroelectric as the barrier
	Yuan, J ; Wu, H ; Cao, LX ; Zhao, L ; Jin, K ; Zhu, BY ; Zhu, SJ ; Zhong, JP ; Miao, J ; Xu, B ; Qi, XY ; Qiu, XG ; Duan, XF ; Zhao, BR
刊名	APPLIED PHYSICS LETTERS
	2007
卷号	90 期号:10
ISSN号	0003-6951
中文摘要	The authors report the formation of the metallic oxide p-I-n junctions with the ferroelectric (Ba,Sr)TiO(3) (BST) as the barrier. The junctions with different thicknesses of BST are investigated. With appropriate thickness, the junctions possess definite parameters, such as the negligible reversed current density (<= 10(-7) A/cm(2)), large breakdown voltage (> 7 V), and ultrahigh rectification (> 2x10(4)) in the bias voltage <= 2.0 V and temperature range from 5 to 300 K. It is under consideration that the built-in field V(0), the ferroelectric reversed polarized field V(rp), and the resistivity of the BST layer together decide the transport properties of the junctions. (c) 2007 American Institute of Physics.
收录类别	SCI
公开日期	2013-09-18
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/41927]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Yuan, J,Wu, H,Cao, LX,et al. Metallic oxide p-I-n junctions with ferroelectric as the barrier[J]. APPLIED PHYSICS LETTERS,2007,90(10).
APA	Yuan, J.,Wu, H.,Cao, LX.,Zhao, L.,Jin, K.,...&Zhao, BR.(2007).Metallic oxide p-I-n junctions with ferroelectric as the barrier.APPLIED PHYSICS LETTERS,90(10).
MLA	Yuan, J,et al."Metallic oxide p-I-n junctions with ferroelectric as the barrier".APPLIED PHYSICS LETTERS 90.10(2007).