MEASUREMENT OF ELASTIC RELAXATION IN CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES

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	MEASUREMENT OF ELASTIC RELAXATION IN CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES
	DUAN, XF
刊名	APPLIED PHYSICS LETTERS
	1992
卷号	61 期号:3 页码:324
ISSN号	0003-6951
通讯作者	DUAN, XF: CHINESE ACAD SCI,BEIJING LAB ELECTRON MICROSCOPY,POB 2724,BEIJING 100080,PEOPLES R CHINA.
中文摘要	Two types of relaxation occur in the cross-sectional transmission electron microscopy samples of the GexSi1-x/Si strained-layer superlattices (SLS) by large-angle convergent-beam electron diffraction (LACBED) and imaging technique which gives a good LACBED pattern superimposed on a high spatial resolution shadow image of the SLS. One type of relaxation occurs between the Si and the GeSi layers. It is negligible in the convergent-beam electron diffraction (CBED) case for the larger value of the ratio of the sample thickness to the SLS wavelength. Another type occurs between the superlattice as an average crystal and the Si substrate. The relaxation of the SLS can be measured by the shift of the Kikuchi line in the SLS from that in the Si substrate.
收录类别	SCI
语种	英语
公开日期	2013-09-18
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/41813]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	DUAN, XF. MEASUREMENT OF ELASTIC RELAXATION IN CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES[J]. APPLIED PHYSICS LETTERS,1992,61(3):324.
APA	DUAN, XF.(1992).MEASUREMENT OF ELASTIC RELAXATION IN CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES.APPLIED PHYSICS LETTERS,61(3),324.
MLA	DUAN, XF."MEASUREMENT OF ELASTIC RELAXATION IN CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES".APPLIED PHYSICS LETTERS 61.3(1992):324.