Magnetoresistance of boron-doped chemical vapor deposition polycrystalline diamond films

CORC > 物理研究所 > 物理所公开发表论文 > 期刊论文

	Magnetoresistance of boron-doped chemical vapor deposition polycrystalline diamond films
	Fei, YJ ; Yang, D ; Wang, X ; Meng, QB ; Wang, XJ ; Xiong, YY ; Nie, YX ; Feng, KA
刊名	DIAMOND AND RELATED MATERIALS
	2002
卷号	11 期号:1 页码:49
关键词	ELECTRICAL-PROPERTIES
ISSN号	0925-9635
通讯作者	Fei, YJ: Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要	The electrical properties and magnetoresistance of boron-doped polycrystalline diamond films grown on p-typed Si (100) by hot filament chemical vapor deposition have been investigated. As the atomic boron concentration increases from 3 x 10(17) to 3 x 10(19) cm(-3), and grain size from 5 to 15 mum, the quality of diamond is improved, which causes the carrier mobility V and longitudinal magnetoresistance change rate Deltarho(//)/rho(0) to increase. For a magnetic field (B) of 20 tesla and temperature 300 K, the longitudinal resistance change rate Deltarho(//)/rho(0) is up to 20%. Meanwhile, Deltarho(//)/rho(0) is proportional to mu(2)B(2) in a low field and proportional to mu(15)B in a high field. It is the first time that a result is obtained in a high field. (C) 2002 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-18
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/41678]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Fei, YJ,Yang, D,Wang, X,et al. Magnetoresistance of boron-doped chemical vapor deposition polycrystalline diamond films[J]. DIAMOND AND RELATED MATERIALS,2002,11(1):49.
APA	Fei, YJ.,Yang, D.,Wang, X.,Meng, QB.,Wang, XJ.,...&Feng, KA.(2002).Magnetoresistance of boron-doped chemical vapor deposition polycrystalline diamond films.DIAMOND AND RELATED MATERIALS,11(1),49.
MLA	Fei, YJ,et al."Magnetoresistance of boron-doped chemical vapor deposition polycrystalline diamond films".DIAMOND AND RELATED MATERIALS 11.1(2002):49.