Low-temperature transport properties of individual SnO2 nanowires

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	Low-temperature transport properties of individual SnO2 nanowires
	Ma, YJ ; Zhou, F ; Lu, L ; Zhang, Z
刊名	SOLID STATE COMMUNICATIONS
	2004
卷号	130 期号:5 页码:313
关键词	OPTICAL-PROPERTIES RAMAN-SCATTERING COULOMB GAP TIN OXIDE NANOBELTS FILMS MORPHOLOGIES SENSORS
ISSN号	0038-1098
通讯作者	Ma, YJ: Chinese Acad Sci, Inst Phys, Beijing Lab Electron Microscopy, POB 603, Beijing 100080, Peoples R China.
中文摘要	Stannic oxide (SOn(2)) nanowires have been prepared by Chemical vapor deposition (CVD). The low-temperature transport properties of a single SnO2 nanowire have been studied. It is found that the transport of the electrons in the nanowires is dominated by the Efros-Shklovskii variable-range hopping (ES-VRH) process due to the enhanced Coulomb interaction in this semiconducting nanowire. The temperature dependence of the resistance follows the relation InR similar to T-1/2. On the I-V and dI/dV curves of the nanowire a Coulomb gap-like structure at low temperatures appears. (C) 2004 Elsevier Ltd. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-18
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/41082]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Ma, YJ,Zhou, F,Lu, L,et al. Low-temperature transport properties of individual SnO2 nanowires[J]. SOLID STATE COMMUNICATIONS,2004,130(5):313.
APA	Ma, YJ,Zhou, F,Lu, L,&Zhang, Z.(2004).Low-temperature transport properties of individual SnO2 nanowires.SOLID STATE COMMUNICATIONS,130(5),313.
MLA	Ma, YJ,et al."Low-temperature transport properties of individual SnO2 nanowires".SOLID STATE COMMUNICATIONS 130.5(2004):313.