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Light-induced changes in diphasic nanocrystalline silicon films and solar cells
Hao, HY ; Liao, XB ; Zeng, XB ; Diao, HW ; Xu, Y ; Kong, GL
刊名JOURNAL OF NON-CRYSTALLINE SOLIDS
2006
卷号352期号:9-20页码:1904
关键词OPEN-CIRCUIT VOLTAGE AMORPHOUS-SILICON RAMAN-SPECTROSCOPY STABILITY
ISSN号0022-3093
通讯作者Hao, HY: Chinese Acad Sci, Inst Semicond, State Lab Surface Phys, Beijing 100083, Peoples R China.
中文摘要A series of diphasic nanocrystalline silicon films and solar cells was prepared using different hydrogen dilution ratios of silane by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). It was observed that after light soaking the open circuit voltage (V-oc) of the diphasic solar cells increased, while that of amorphous silicon solar cells decreased. Raman scattering spectroscopy was performed on the series of diphasic silicon films before and after light soaking. It was found that after light soaking the nanostruclures in the diphasic nanocrystalline silicon films were changed. Both the grain sizes and grain volume fraction reduced, while the grain boundary components increased. These results provide experimental evidence for the conjecture that the light-induced increase in V-oc of the diphasic nanocrystalline solar cells might be induced by the changes in the nanostructure of the intrinsic layer. (c) 2006 Elsevier B.V. All rights reserved.
收录类别SCI
语种英语
公开日期2013-09-18
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/40834]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Hao, HY,Liao, XB,Zeng, XB,et al. Light-induced changes in diphasic nanocrystalline silicon films and solar cells[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS,2006,352(9-20):1904.
APA Hao, HY,Liao, XB,Zeng, XB,Diao, HW,Xu, Y,&Kong, GL.(2006).Light-induced changes in diphasic nanocrystalline silicon films and solar cells.JOURNAL OF NON-CRYSTALLINE SOLIDS,352(9-20),1904.
MLA Hao, HY,et al."Light-induced changes in diphasic nanocrystalline silicon films and solar cells".JOURNAL OF NON-CRYSTALLINE SOLIDS 352.9-20(2006):1904.
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