Ionized-oxygen vacancies related dielectric relaxation in heteroepitaxial K0.5Na0.5NbO3/La0.67Sr0.33MnO3 structure at elevated temperature

CORC > 物理研究所 > 物理所公开发表论文 > 期刊论文

	Ionized-oxygen vacancies related dielectric relaxation in heteroepitaxial K0.5Na0.5NbO3/La0.67Sr0.33MnO3 structure at elevated temperature
	Miao, J ; Xu, XG ; Jiang, Y ; Cao, LX ; Zhao, BR
刊名	APPLIED PHYSICS LETTERS
	2009
卷号	95 期号:13
关键词	THIN-FILMS BEHAVIOR SRTIO3
ISSN号	0003-6951
通讯作者	Miao, J: Univ Sci & Technol Beijing, Sch Mat Sci & Engn, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China.
中文摘要	Ferroelectric K0.5Na0.5NbO3 (KNN) thin film was epitaxially grown on La0.67Sr0.33MnO3 (LSMO) buffered LaAlO3 substrate by pulse laser deposition. The crystallographic structure of KNN/LSMO was confirmed by x-ray diffraction. Interestingly, a dielectric relaxor feature was found in the temperature range 200-350 degrees C. The activation energies for relaxation and conduction of the films were found to be 1.87 and 0.63-0.71 eV, respectively. The mechanism for dielectric relaxation in KNN/LSMO structure was discussed under a thermally activated process. The remnant polarization and coercive field of the films were 21.3 mu C/cm(2) and 91 kV/cm, respectively. (C) 2009 American Institute of Physics. [doi:10.1063/1.3242009]
收录类别	SCI
资助信息	National Natural Science Foundation of China [50802007, 50831002]; Research Fund for the Doctoral Program of Higher Education of China [200800081011]; National Basic Research Program of China [2007CB936202]
语种	英语
公开日期	2013-09-18
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/40389]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Miao, J,Xu, XG,Jiang, Y,et al. Ionized-oxygen vacancies related dielectric relaxation in heteroepitaxial K0.5Na0.5NbO3/La0.67Sr0.33MnO3 structure at elevated temperature[J]. APPLIED PHYSICS LETTERS,2009,95(13).
APA	Miao, J,Xu, XG,Jiang, Y,Cao, LX,&Zhao, BR.(2009).Ionized-oxygen vacancies related dielectric relaxation in heteroepitaxial K0.5Na0.5NbO3/La0.67Sr0.33MnO3 structure at elevated temperature.APPLIED PHYSICS LETTERS,95(13).
MLA	Miao, J,et al."Ionized-oxygen vacancies related dielectric relaxation in heteroepitaxial K0.5Na0.5NbO3/La0.67Sr0.33MnO3 structure at elevated temperature".APPLIED PHYSICS LETTERS 95.13(2009).