Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors

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	Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors
	Liang, HL ; Mei, ZX ; Zhang, QH ; Gu, L ; Liang, S ; Hou, YN ; Ye, DQ ; Gu, CZ ; Yu, RC ; Du, XL
刊名	APPLIED PHYSICS LETTERS
	2011
卷号	98 期号:22
关键词	MOLECULAR-BEAM EPITAXY SI SUBSTRATE GROWTH FILMS DETECTORS ZNO
ISSN号	0003-6951
通讯作者	Mei, ZX: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China.
中文摘要	High-quality wurtzite MgZnO film was deposited on Si(111) substrate via a delicate interface engineering using BeO, by which solar-blind ultraviolet photodetectors were fabricated on the n-MgZnO(0001)/p-Si(111) heterojunction. A thin Be layer was deposited on clean Si surface with subsequent in situ oxidation processes, which provides an excellent template for high-Mg-content MgZnO growth. The interface controlling significantly improves the device performance, as the photodetector demonstrates a sharp cutoff wavelength at 280 nm, consistent with the optical band gap of the epilayer. Our experimental results promise potential applications of this technique in integration of solar-blind ultraviolet optoelectronic device with Si microelectronic technologies. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3595342]
收录类别	SCI
资助信息	National Science Foundation [61076007, 50532090, 60606023, 50825206, 10974235]; Ministry of Science and Technology of China [2007CB936203, 2009CB929400, 2009AA033101, 2011CB302002]; Chinese Academy of Sciences; Diffusion Scattering Station in Beijing Synchrotron Radiation Facility
语种	英语
公开日期	2013-09-18
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/40110]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Liang, HL,Mei, ZX,Zhang, QH,et al. Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors[J]. APPLIED PHYSICS LETTERS,2011,98(22).
APA	Liang, HL.,Mei, ZX.,Zhang, QH.,Gu, L.,Liang, S.,...&Du, XL.(2011).Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors.APPLIED PHYSICS LETTERS,98(22).
MLA	Liang, HL,et al."Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors".APPLIED PHYSICS LETTERS 98.22(2011).