Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells

CORC > 物理研究所 > 物理所公开发表论文 > 期刊论文

	Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells
	Wang, HN ; Ji, ZW ; Qu, S ; Wang, G ; Jiang, YZ ; Liu, BL ; Xu, XG ; Mino, H
刊名	OPTICS EXPRESS
	2012
卷号	20 期号:4 页码:3932
关键词	LIGHT-EMITTING-DIODES CHEMICAL-VAPOR-DEPOSITION DISORDERED SEMICONDUCTORS SHIFT LUMINESCENCE ABSORPTION SIMULATION EMISSION DENSITY
ISSN号	1094-4087
通讯作者	Wang, HN: Shandong Univ, Sch Phys, Jinan 250100, Peoples R China.
中文摘要	Excitation power and temperature dependences of the photoluminescence (PL) spectra are studied in InGaN/GaN multiple quantum wells (MQWs). The excitation power dependences of the PL peak energy and linewidth indicate that the emission process of the MQWs is dominated first by the Coulomb screening effect and then by the localized states filling at low temperature, and that the nonradiative centers are thermally activated in low excitation range at room temperature. The anomalous temperature dependences of the peak energy and linewidth are well explained by the localized carrier hopping and thermalization process, and by the exponentially increased density of states with energy in the band tail. Moreover, it is also found that internal quantum efficiency is related to the mechanism conversion from nonradiative to radiative mechanism, and up to the carriers escaping from localized states. (C) 2012 Optical Society of America
收录类别	SCI
资助信息	National Natural Science Foundation of China [10874101]; Science Foundation of Shandong province, China [Y2008A10]; National Basic Research Program of China (973 Program) [2009CB930503]
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/39811]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wang, HN,Ji, ZW,Qu, S,et al. Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells[J]. OPTICS EXPRESS,2012,20(4):3932.
APA	Wang, HN.,Ji, ZW.,Qu, S.,Wang, G.,Jiang, YZ.,...&Mino, H.(2012).Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells.OPTICS EXPRESS,20(4),3932.
MLA	Wang, HN,et al."Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells".OPTICS EXPRESS 20.4(2012):3932.