Improvement of Ge self-organized quantum dots by use of Sb surfactant

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	Improvement of Ge self-organized quantum dots by use of Sb surfactant
	Peng, CS ; Huang, Q ; Cheng, WQ ; Zhou, JM ; Zhang, YH ; Sheng, TT ; Tung, CH
刊名	APPLIED PHYSICS LETTERS
	1998
卷号	72 期号:20 页码:2541
关键词	GROWTH PHOTOLUMINESCENCE CONFINEMENT TEMPERATURE ISLANDS SI(001)
ISSN号	0003-6951
通讯作者	Peng, CS: Chinese Acad Sci, Inst Phys, POB 60336, Beijing 100080, Peoples R China.
中文摘要	A Sb-mediated growth technique is developed to deposit Ge quantum dots (QDs) of small size, high density, and foe of dislocations. These QDs were grown at low growth temperature by molecular beam epitaxy. The photoluminescence and absorption properties of these Ge QDs suggest an indirect-to-direct conversion, which is in good agreement with a theoretical calculation. (C) 1998 American Institute of Physics. [S0003-6951(98)00420-3].
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/39667]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Peng, CS,Huang, Q,Cheng, WQ,et al. Improvement of Ge self-organized quantum dots by use of Sb surfactant[J]. APPLIED PHYSICS LETTERS,1998,72(20):2541.
APA	Peng, CS.,Huang, Q.,Cheng, WQ.,Zhou, JM.,Zhang, YH.,...&Tung, CH.(1998).Improvement of Ge self-organized quantum dots by use of Sb surfactant.APPLIED PHYSICS LETTERS,72(20),2541.
MLA	Peng, CS,et al."Improvement of Ge self-organized quantum dots by use of Sb surfactant".APPLIED PHYSICS LETTERS 72.20(1998):2541.