Improvement of Ge self-organized quantum dots by use of Sb surfactant | |
Peng, CS ; Huang, Q ; Cheng, WQ ; Zhou, JM ; Zhang, YH ; Sheng, TT ; Tung, CH | |
刊名 | APPLIED PHYSICS LETTERS
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1998 | |
卷号 | 72期号:20页码:2541 |
关键词 | GROWTH PHOTOLUMINESCENCE CONFINEMENT TEMPERATURE ISLANDS SI(001) |
ISSN号 | 0003-6951 |
通讯作者 | Peng, CS: Chinese Acad Sci, Inst Phys, POB 60336, Beijing 100080, Peoples R China. |
中文摘要 | A Sb-mediated growth technique is developed to deposit Ge quantum dots (QDs) of small size, high density, and foe of dislocations. These QDs were grown at low growth temperature by molecular beam epitaxy. The photoluminescence and absorption properties of these Ge QDs suggest an indirect-to-direct conversion, which is in good agreement with a theoretical calculation. (C) 1998 American Institute of Physics. [S0003-6951(98)00420-3]. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-17 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/39667] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Peng, CS,Huang, Q,Cheng, WQ,et al. Improvement of Ge self-organized quantum dots by use of Sb surfactant[J]. APPLIED PHYSICS LETTERS,1998,72(20):2541. |
APA | Peng, CS.,Huang, Q.,Cheng, WQ.,Zhou, JM.,Zhang, YH.,...&Tung, CH.(1998).Improvement of Ge self-organized quantum dots by use of Sb surfactant.APPLIED PHYSICS LETTERS,72(20),2541. |
MLA | Peng, CS,et al."Improvement of Ge self-organized quantum dots by use of Sb surfactant".APPLIED PHYSICS LETTERS 72.20(1998):2541. |
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