Improvement of electron transport in a ZnSe nanowire by in situ strain

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	Improvement of electron transport in a ZnSe nanowire by in situ strain
	Wang, YG ; Zhang, QL ; Wang, TH ; Han, W ; Zhou, SX
刊名	JOURNAL OF PHYSICS D-APPLIED PHYSICS
	2011
卷号	44 期号:12
关键词	CURRENT-VOLTAGE CHARACTERISTICS SEMICONDUCTOR NANOWHISKERS SELECTIVE GROWTH LOW-TEMPERATURE SILICON HETEROSTRUCTURES PLASTICITY DEPOSITION INSULATOR CONTACT
ISSN号	0022-3727
通讯作者	Wang, YG: Hunan Univ, Minist Educ, Key Lab Micronano Optoelect Devices, Changsha 410082, Hunan, Peoples R China.
中文摘要	Strain is introduced in a single ZnSe nanowire by compressive stress in situ applied along the axial direction, which controllably bends the nanowire under transmission electron microscope inspection. Meanwhile, the I-V measurement of a single ZnSe nanowire before and after the strain is carried out in order to investigate the influence of strain on the electrical properties of the individual ZnSe nanowire. A remarkable jump of about 100% in current and a reduction of about 30% in threshold voltage are detected when the stress is applied along the longitudinal direction of the nanowire. The advantage of stress-induced strains is to produce both compression and tension simultaneously in a single nanowire, which enhance the electron and hole mobilities and significantly improve the electron transport as a consequence. Narrowing the band gap due to the tensile strain, confirmed by theoretical calculation, is responsible for the reduction of threshold voltage. The stress-induced strains in the ZnSe nanowire are favourable for optimization of the carrier transport.
收录类别	SCI
资助信息	National Natural Science Foundation of China [10774174, 60796078]; '973' National Key Basic Research Program of China [2007CB310500]
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/39666]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wang, YG,Zhang, QL,Wang, TH,et al. Improvement of electron transport in a ZnSe nanowire by in situ strain[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(12).
APA	Wang, YG,Zhang, QL,Wang, TH,Han, W,&Zhou, SX.(2011).Improvement of electron transport in a ZnSe nanowire by in situ strain.JOURNAL OF PHYSICS D-APPLIED PHYSICS,44(12).
MLA	Wang, YG,et al."Improvement of electron transport in a ZnSe nanowire by in situ strain".JOURNAL OF PHYSICS D-APPLIED PHYSICS 44.12(2011).