High-power 880-nm diode-directly-pumped passively mode-locked Nd:YVO4 laser at 1342 nm with a semiconductor saturable absorber mirror | |
Li, FQ ; Liu, K ; Han, L ; Zong, N ; Bo, Y ; Zhang, JY ; Peng, QJ ; Cui, DF ; Xu, ZY | |
刊名 | OPTICS LETTERS
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2011 | |
卷号 | 36期号:8页码:1485 |
关键词 | NDYVO4 LASER 1.3-MU-M ND-YVO4 ND 1.34-MU-M |
ISSN号 | 0146-9592 |
通讯作者 | Peng, QJ: Chinese Acad Sci, Res Ctr Laser Phys & Technol, Key Lab Funct Crystal & Laser Technol, Tech Inst Phys & Chem, Beijing 100190, Peoples R China. |
中文摘要 | A high-power 880-nm diode-directly-pumped passively mode-locked 1342nm Nd:YVO4 laser was demonstrated with a semiconductor saturable absorber mirror ( SESAM). The laser mode radii in the laser crystal and on the SESAM were optimized carefully using the ABCD matrix formalism. An average output power of 2.3 W was obtained with a repetition rate of 76 MHz and a pulse width of 29.2 ps under an absorbed pump power of 12.1 W, corresponding to an optical-optical efficiency of 19.0% and a slope efficiency of 23.9%, respectively. (c) 2011 Optical Society of America |
收录类别 | SCI |
资助信息 | State Key Program for Basic Research of China; National High Technology Research and Development Program; National Natural Science Foundation of China (NSFC) |
语种 | 英语 |
公开日期 | 2013-09-17 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/39375] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Li, FQ,Liu, K,Han, L,et al. High-power 880-nm diode-directly-pumped passively mode-locked Nd:YVO4 laser at 1342 nm with a semiconductor saturable absorber mirror[J]. OPTICS LETTERS,2011,36(8):1485. |
APA | Li, FQ.,Liu, K.,Han, L.,Zong, N.,Bo, Y.,...&Xu, ZY.(2011).High-power 880-nm diode-directly-pumped passively mode-locked Nd:YVO4 laser at 1342 nm with a semiconductor saturable absorber mirror.OPTICS LETTERS,36(8),1485. |
MLA | Li, FQ,et al."High-power 880-nm diode-directly-pumped passively mode-locked Nd:YVO4 laser at 1342 nm with a semiconductor saturable absorber mirror".OPTICS LETTERS 36.8(2011):1485. |
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