High quality, high-k gate dielectric: amorphous LaAlO3 thin films grown on Si(100) without Si interfacial layer

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	High quality, high-k gate dielectric: amorphous LaAlO3 thin films grown on Si(100) without Si interfacial layer
	Yan, L ; Lu, HB ; Tan, GT ; Chen, F ; Zhou, YL ; Yang, GZ ; Liu, W ; Chen, ZH
刊名	APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
	2003
卷号	77 期号:5 页码:721
关键词	SRTIO3 STAGE
ISSN号	0947-8396
通讯作者	Chen, ZH: Chinese Acad Sci, Inst Phys, Lab Opt Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要	High-k dielectric amorphous LaAlO3 thin films have been grown on n-type Si(100) substrates by laser molecular beam epitaxy. The interfacial characteristics of the LaAlO3 films on Si were measured by high-resolution transmission electron micrography and X-ray photoemission spectroscopy. A sharp interface without a silica inter-layer between the LaAlO3 film and Si substrate was observed. Atomic force microscopy measurements indicated that the root-mean-square surface roughness within a 2mum x 2mum area of the LAO films was 0.12 nm. The flatband voltage and fixed charge density of the 8 nm thickness LaAlO3 films were about 0.355 V and 1.8x10(12)/cm(2), respectively. The leakage currents of the LaAlO3/Si(100) samples with different film thicknesses of 5, 8 and 12 nm were 0.45, 0.23 and 0.05 mA/cm(2), respectively, at a +1 V dc bias voltage. LaAlO3 appears to be one of the most promising high dielectric constant materials for use in future ultra large scale integrated devices.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/39236]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Yan, L,Lu, HB,Tan, GT,et al. High quality, high-k gate dielectric: amorphous LaAlO3 thin films grown on Si(100) without Si interfacial layer[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2003,77(5):721.
APA	Yan, L.,Lu, HB.,Tan, GT.,Chen, F.,Zhou, YL.,...&Chen, ZH.(2003).High quality, high-k gate dielectric: amorphous LaAlO3 thin films grown on Si(100) without Si interfacial layer.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,77(5),721.
MLA	Yan, L,et al."High quality, high-k gate dielectric: amorphous LaAlO3 thin films grown on Si(100) without Si interfacial layer".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 77.5(2003):721.