High frequency impedance inverse in MTJ junction

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	High frequency impedance inverse in MTJ junction
	Hsieh, LC ; Huang, YW ; Han, XF ; Zeng, ZM ; Chien, WC ; Peng, TY ; Lo, CK ; Yao, YD
刊名	JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
	2007
卷号	310 期号:2 页码:1903
ISSN号	0304-8853
中文摘要	The magnetoimpedance effect of magnetic tunnel junction ( MTJ) was investigated at room temperature in the frequency ranged from 100 Hz to 15 MHz. The MR loop with a ratio of 9.49% at 5MHz switches to - 11.51% at 7 MHz, respectively. This indicates the MR loop reverse shape and sign around 6 MHz. This inverse MR effect is explained by the impedance competition among Resistor- Inductor series circuit and Capacitor part. (c) 2006 Elsevier B. V. All rights reserved.
收录类别	SCI
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/39189]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Hsieh, LC,Huang, YW,Han, XF,et al. High frequency impedance inverse in MTJ junction[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,2007,310(2):1903.
APA	Hsieh, LC.,Huang, YW.,Han, XF.,Zeng, ZM.,Chien, WC.,...&Yao, YD.(2007).High frequency impedance inverse in MTJ junction.JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,310(2),1903.
MLA	Hsieh, LC,et al."High frequency impedance inverse in MTJ junction".JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 310.2(2007):1903.