Growth of nearly one nanometer large silicon particles in silicon carbide and their quantum-confined photoluminescence features

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	Growth of nearly one nanometer large silicon particles in silicon carbide and their quantum-confined photoluminescence features
	Huang, R ; Ma, LB ; Song, R ; Du, Y ; Shi, HJ ; Ye, JP ; Lin, Y ; Cao, ZX
刊名	NANOTECHNOLOGY
	2007
卷号	18 期号:44
ISSN号	0957-4484
中文摘要	Silicon particles approaching the size of 1 nm were grown along with the confining SiC films by employing a low-temperature chemical vapor deposition procedure. The resulting amorphous composite structure enables an experimental study of the quantum confinement effect in extremely narrow potential wells, as exemplified here by photoluminescence measurement. Owing to the enhanced energy fluctuation for such small particles, strong photoluminescence centered at 450-540 nm, and of comparable profiles, was measured in one single sample with an excitation wavelength selectable within 360-420 nm. Moreover, the typical decay time was found to be below 3.0 ns. These properties hold promise for the fabrication of wide-spectrum photoreceptors, ultraviolet-light detectors, and other optoelectronic devices.
收录类别	SCI
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/38980]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Huang, R,Ma, LB,Song, R,et al. Growth of nearly one nanometer large silicon particles in silicon carbide and their quantum-confined photoluminescence features[J]. NANOTECHNOLOGY,2007,18(44).
APA	Huang, R.,Ma, LB.,Song, R.,Du, Y.,Shi, HJ.,...&Cao, ZX.(2007).Growth of nearly one nanometer large silicon particles in silicon carbide and their quantum-confined photoluminescence features.NANOTECHNOLOGY,18(44).
MLA	Huang, R,et al."Growth of nearly one nanometer large silicon particles in silicon carbide and their quantum-confined photoluminescence features".NANOTECHNOLOGY 18.44(2007).