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Growth of GaSb single crystal in space
Ge, PW ; Nishinaga, T ; Li, CR ; Huo, CR ; Nakamura, T ; Huang, WD ; Voloshin, AE ; Lomov, AA
刊名SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY
2001
卷号44期号:6页码:762
关键词MICROGRAVITY GRAVITY INSB
ISSN号1006-9283
通讯作者Ge, PW: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要The crystal growth under microgravity condition in space has attracted a lot of attention, for the quality of crystals can be improved under microgravity because it creates an environment where nature convection is suppressed and mass transportation is controlled by diffusion. This is a joint work between Institute of Physics, the Chinese Academy of Sciences and Department of Electronics Engineering, the University of Tokyo. A rod of GaSb single crystal doped with Te, whose diameter is 6 mm and length is 30 mm, was grown in space during the China returnable satellite mission No. 14 in 1992. The research results show that there was no striations in the space-grown crystal part, and furthermore the dislocation density was close to zero in the part where melt was not in contact with quartz wall during the crystal growing in the space, but it increased rapidly after the melt was in contact with the wall. This paper summarizes the growth and research results of the GaSb crystal in detail, and analyzes the influences of microgravity on crystal growth and its potential developments in the future.
收录类别SCI
语种英语
公开日期2013-09-17
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/38961]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Ge, PW,Nishinaga, T,Li, CR,et al. Growth of GaSb single crystal in space[J]. SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY,2001,44(6):762.
APA Ge, PW.,Nishinaga, T.,Li, CR.,Huo, CR.,Nakamura, T.,...&Lomov, AA.(2001).Growth of GaSb single crystal in space.SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY,44(6),762.
MLA Ge, PW,et al."Growth of GaSb single crystal in space".SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY 44.6(2001):762.
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