Growth of GaN single crystals by Li3N flux with Mn as addition

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	Growth of GaN single crystals by Li3N flux with Mn as addition
	Li, H ; Bao, HQ ; Wang, G ; Song, B ; Wang, WJ ; Chen, XL
刊名	CRYSTAL GROWTH & DESIGN
	2008
卷号	8 期号:8 页码:2775
关键词	VAPOR-PHASE EPITAXY NITROGEN PRESSURE LASER-DIODES BULK MECHANISM SYSTEM INN
ISSN号	1528-7483
通讯作者	Chen, XL: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, POB 603, Beijing 100190, Peoples R China.
中文摘要	Metal Mn was introduced into Li3N flux to grow GaN single crystals from Ga melt. Colorless, transparent GaN single crystals with an average size of 2-3 mm were obtained at 800 degrees C under N-2 pressure of about 2 atm. The effects of Mn on the quality, size distribution, morphologies, and formation mechanism of GaN crystals were investigated. It was found that the proper addition of Mn favored GaN growth, impeded the homogeneous nucleation to some extent, and resulted in a more uniform size distribution and high quality of GaN crystals as compared with that of GaN grown using Li3N as flux only. The formation mechanism was enhanced by Mn addition. These results suggested a promising new route for the growth of large size and high quality GaN single crystals from a Li-Ga-N system in the future by optimizing the molar ratio of Mn to Li3N.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/38959]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Li, H,Bao, HQ,Wang, G,et al. Growth of GaN single crystals by Li3N flux with Mn as addition[J]. CRYSTAL GROWTH & DESIGN,2008,8(8):2775.
APA	Li, H,Bao, HQ,Wang, G,Song, B,Wang, WJ,&Chen, XL.(2008).Growth of GaN single crystals by Li3N flux with Mn as addition.CRYSTAL GROWTH & DESIGN,8(8),2775.
MLA	Li, H,et al."Growth of GaN single crystals by Li3N flux with Mn as addition".CRYSTAL GROWTH & DESIGN 8.8(2008):2775.