GaN single crystals grown under moderate nitrogen pressure by a new flux: Ca3N2

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	GaN single crystals grown under moderate nitrogen pressure by a new flux: Ca3N2
	Jian, JK ; Wang, G ; Wang, C ; Yuan, WX ; Chen, XL
刊名	JOURNAL OF CRYSTAL GROWTH
	2006
卷号	291 期号:1 页码:72
关键词	BULK GAN NA FLUX LASER-DIODES NITRIDE CA GALLIUM
ISSN号	0022-0248
通讯作者	Chen, XL: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Nano Scale Phys & Device Lab, POB 603, Beijing 100080, Peoples R China.
中文摘要	Using a new flux, Ca3N2, bulk GaN crystals were grown from Ga melt at 900 degrees C under a nitrogen pressure of about 0.2 MPa. Optical observations indicated that the grown GaN crystals were transparent hexagonal prisms with length up to 1.5 mm. The morphology of these GaN crystals was characterized by scanning electron microscopy (SEM) and compared with that of GaN crystals grown by using Li and Na flux. Raman scattering examinations revealed that the GaN crystals grew along [0001] direction. These results demonstrated that Ca3N2 was an effective new flux in the crystal growth of GaN besides the known fluxes of Li, Na and Na-Ca. (c) 2006 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/38562]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Jian, JK,Wang, G,Wang, C,et al. GaN single crystals grown under moderate nitrogen pressure by a new flux: Ca3N2[J]. JOURNAL OF CRYSTAL GROWTH,2006,291(1):72.
APA	Jian, JK,Wang, G,Wang, C,Yuan, WX,&Chen, XL.(2006).GaN single crystals grown under moderate nitrogen pressure by a new flux: Ca3N2.JOURNAL OF CRYSTAL GROWTH,291(1),72.
MLA	Jian, JK,et al."GaN single crystals grown under moderate nitrogen pressure by a new flux: Ca3N2".JOURNAL OF CRYSTAL GROWTH 291.1(2006):72.