Gallium-Incorporated TiN Metal Gate With Band-Edge Work Function and Excellent Thermal Stability for PMOS Device Applications

CORC > 物理研究所 > 物理所公开发表论文 > 期刊论文

	Gallium-Incorporated TiN Metal Gate With Band-Edge Work Function and Excellent Thermal Stability for PMOS Device Applications
	Xu, QX ; Xu, GB ; Liang, QQ ; Yao, Y ; Duan, XF ; Li, JF
刊名	IEEE ELECTRON DEVICE LETTERS
	2011
卷号	32 期号:9 页码:1197
关键词	HIGH-K CMOS TECHNOLOGY SHIFT
ISSN号	0741-3106
通讯作者	Xu, QX: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China.
中文摘要	A cost-effective method for modulating the effective work function (EWF) of a metal gate while simultaneously decreasing the equivalent oxide thickness (EOT) of a high-k dielectric is proposed for the first time. By incorporating gallium (Ga) into the TiN/HfLaON/interfacial layer (IL) SiO(2) PMOS gate stack, a band-edge EWF of 5.18 eV and an EOT of 0.57 nm can be obtained. Excellent thermal stability was maintained even after the post metal anneal (PMA) at 1000. degrees C. The impacts of TiN thickness, Ga implant doses, and PMA conditions on the properties of the Ga-incorporated TiN/HLaON/IL SiO(2) gate stack are investigated, and the corresponding possible mechanisms are discussed. This technique has been successfully applied to the gate-first process flow to fabricate PMOSFETs with a minimum gate length of 28 nm.
收录类别	SCI
资助信息	National Basic Research Program of China (973); China National ST Major Project [02]
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/38555]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Xu, QX,Xu, GB,Liang, QQ,et al. Gallium-Incorporated TiN Metal Gate With Band-Edge Work Function and Excellent Thermal Stability for PMOS Device Applications[J]. IEEE ELECTRON DEVICE LETTERS,2011,32(9):1197.
APA	Xu, QX,Xu, GB,Liang, QQ,Yao, Y,Duan, XF,&Li, JF.(2011).Gallium-Incorporated TiN Metal Gate With Band-Edge Work Function and Excellent Thermal Stability for PMOS Device Applications.IEEE ELECTRON DEVICE LETTERS,32(9),1197.
MLA	Xu, QX,et al."Gallium-Incorporated TiN Metal Gate With Band-Edge Work Function and Excellent Thermal Stability for PMOS Device Applications".IEEE ELECTRON DEVICE LETTERS 32.9(2011):1197.