Gallium-Incorporated TiN Metal Gate With Band-Edge Work Function and Excellent Thermal Stability for PMOS Device Applications | |
Xu, QX ; Xu, GB ; Liang, QQ ; Yao, Y ; Duan, XF ; Li, JF | |
刊名 | IEEE ELECTRON DEVICE LETTERS
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2011 | |
卷号 | 32期号:9页码:1197 |
关键词 | HIGH-K CMOS TECHNOLOGY SHIFT |
ISSN号 | 0741-3106 |
通讯作者 | Xu, QX: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China. |
中文摘要 | A cost-effective method for modulating the effective work function (EWF) of a metal gate while simultaneously decreasing the equivalent oxide thickness (EOT) of a high-k dielectric is proposed for the first time. By incorporating gallium (Ga) into the TiN/HfLaON/interfacial layer (IL) SiO(2) PMOS gate stack, a band-edge EWF of 5.18 eV and an EOT of 0.57 nm can be obtained. Excellent thermal stability was maintained even after the post metal anneal (PMA) at 1000. degrees C. The impacts of TiN thickness, Ga implant doses, and PMA conditions on the properties of the Ga-incorporated TiN/HLaON/IL SiO(2) gate stack are investigated, and the corresponding possible mechanisms are discussed. This technique has been successfully applied to the gate-first process flow to fabricate PMOSFETs with a minimum gate length of 28 nm. |
收录类别 | SCI |
资助信息 | National Basic Research Program of China (973); China National ST Major Project [02] |
语种 | 英语 |
公开日期 | 2013-09-17 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/38555] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Xu, QX,Xu, GB,Liang, QQ,et al. Gallium-Incorporated TiN Metal Gate With Band-Edge Work Function and Excellent Thermal Stability for PMOS Device Applications[J]. IEEE ELECTRON DEVICE LETTERS,2011,32(9):1197. |
APA | Xu, QX,Xu, GB,Liang, QQ,Yao, Y,Duan, XF,&Li, JF.(2011).Gallium-Incorporated TiN Metal Gate With Band-Edge Work Function and Excellent Thermal Stability for PMOS Device Applications.IEEE ELECTRON DEVICE LETTERS,32(9),1197. |
MLA | Xu, QX,et al."Gallium-Incorporated TiN Metal Gate With Band-Edge Work Function and Excellent Thermal Stability for PMOS Device Applications".IEEE ELECTRON DEVICE LETTERS 32.9(2011):1197. |
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