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Fractional topological excitations and quantum phase transition in a bilayer two-dimensional electron gas adjacent to a superconductor film
Hao, NN ; Zhang, W ; Wang, ZG ; Wang, YP ; Zhang, P
刊名PHYSICAL REVIEW B
2010
卷号81期号:12
关键词SOLITONS
ISSN号1098-0121
通讯作者Zhang, P: Inst Appl Phys & Computat Math, POB 8009, Beijing 100088, Peoples R China.
中文摘要We study a bilayer two-dimension-electron-gas (2DEG) adjacent to a type-II superconductor thin film with a pinned vortex lattice. We find that with increasing interlayer tunneling, the system of half-filling presents three phases: gapped phase-I (topological insulator), gapless critical phase-II (metal), and gapped phase-III (band insulator). The total Hall conductance for phase-I/III is 2/0 e(2)/h, and has nonquantized values in phase-II. The excitation (response to topological defect, a local vortex defect) in these three phases shows different behaviors due to the topological property of the system, including fractional charge e/2 for each layer in phase-I. While in the case of quarter-filling, the system undergoes a quantum phase transition from metallic phase to topological insulator phase.
收录类别SCI
资助信息NSFC [10604010, 10874020, 10574150]; CAEP [2008B0102004]; National Basic Research Program of China (973 Program) [2009CB929103, 2006CB921300]
语种英语
公开日期2013-09-17
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/38464]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Hao, NN,Zhang, W,Wang, ZG,et al. Fractional topological excitations and quantum phase transition in a bilayer two-dimensional electron gas adjacent to a superconductor film[J]. PHYSICAL REVIEW B,2010,81(12).
APA Hao, NN,Zhang, W,Wang, ZG,Wang, YP,&Zhang, P.(2010).Fractional topological excitations and quantum phase transition in a bilayer two-dimensional electron gas adjacent to a superconductor film.PHYSICAL REVIEW B,81(12).
MLA Hao, NN,et al."Fractional topological excitations and quantum phase transition in a bilayer two-dimensional electron gas adjacent to a superconductor film".PHYSICAL REVIEW B 81.12(2010).
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