Formation of two dimension Ge cluster superlattice on Si(111)-(7 x 7) surface | |
Yan, L ; Zhang, YP ; Gao, HJ ; Xie, SS ; Pang, SJ | |
刊名 | SURFACE SCIENCE
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2002 | |
卷号 | 506期号:1-2页码:L255 |
关键词 | SCANNING-TUNNELING-MICROSCOPY MOLECULAR-BEAM EPITAXY GROWTH ISLANDS RECONSTRUCTION ORGANIZATION TEMPERATURE NUCLEATION SI(001) STATES |
ISSN号 | 0039-6028 |
通讯作者 | Xie, SS: Chinese Acad Sci, Beijing Lab Vacuum Phys, Inst Phys, POB 2724, Beijing 100080, Peoples R China. |
中文摘要 | The adsorption process of sub-monolayer Ge on Si(111)-(7 x 7) surface is studied using ultrahigh-vacuum scanning tunneling microscopy, By carefully controlling Ge deposition condition, a unique sixfold symmetry superlattice of Ge clusters is formed. It is found that almost all the Ge clusters observed have similar shapes and uniform sizes, and that they sit on both halves of the (7 x 7) unit cells, The formation of the ordered structure is attributed to the fact that the characteristic Si(111)-(7 x 7) reconstruction controls the nucleation and growth of the Ge clusters. (C) 2001 Elsevier Science B.V. All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-17 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/38426] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Yan, L,Zhang, YP,Gao, HJ,et al. Formation of two dimension Ge cluster superlattice on Si(111)-(7 x 7) surface[J]. SURFACE SCIENCE,2002,506(1-2):L255. |
APA | Yan, L,Zhang, YP,Gao, HJ,Xie, SS,&Pang, SJ.(2002).Formation of two dimension Ge cluster superlattice on Si(111)-(7 x 7) surface.SURFACE SCIENCE,506(1-2),L255. |
MLA | Yan, L,et al."Formation of two dimension Ge cluster superlattice on Si(111)-(7 x 7) surface".SURFACE SCIENCE 506.1-2(2002):L255. |
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