Formation of two dimension Ge cluster superlattice on Si(111)-(7 x 7) surface

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	Formation of two dimension Ge cluster superlattice on Si(111)-(7 x 7) surface
	Yan, L ; Zhang, YP ; Gao, HJ ; Xie, SS ; Pang, SJ
刊名	SURFACE SCIENCE
	2002
卷号	506 期号:1-2 页码:L255
关键词	SCANNING-TUNNELING-MICROSCOPY MOLECULAR-BEAM EPITAXY GROWTH ISLANDS RECONSTRUCTION ORGANIZATION TEMPERATURE NUCLEATION SI(001) STATES
ISSN号	0039-6028
通讯作者	Xie, SS: Chinese Acad Sci, Beijing Lab Vacuum Phys, Inst Phys, POB 2724, Beijing 100080, Peoples R China.
中文摘要	The adsorption process of sub-monolayer Ge on Si(111)-(7 x 7) surface is studied using ultrahigh-vacuum scanning tunneling microscopy, By carefully controlling Ge deposition condition, a unique sixfold symmetry superlattice of Ge clusters is formed. It is found that almost all the Ge clusters observed have similar shapes and uniform sizes, and that they sit on both halves of the (7 x 7) unit cells, The formation of the ordered structure is attributed to the fact that the characteristic Si(111)-(7 x 7) reconstruction controls the nucleation and growth of the Ge clusters. (C) 2001 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/38426]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Yan, L,Zhang, YP,Gao, HJ,et al. Formation of two dimension Ge cluster superlattice on Si(111)-(7 x 7) surface[J]. SURFACE SCIENCE,2002,506(1-2):L255.
APA	Yan, L,Zhang, YP,Gao, HJ,Xie, SS,&Pang, SJ.(2002).Formation of two dimension Ge cluster superlattice on Si(111)-(7 x 7) surface.SURFACE SCIENCE,506(1-2),L255.
MLA	Yan, L,et al."Formation of two dimension Ge cluster superlattice on Si(111)-(7 x 7) surface".SURFACE SCIENCE 506.1-2(2002):L255.