Film Thickness Dependence of Rectifying Properties of La1.85Sr0.15CuO4/Nb-SrTiO3 Junctions

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	Film Thickness Dependence of Rectifying Properties of La1.85Sr0.15CuO4/Nb-SrTiO3 Junctions
	Chen, LM ; Li, GC ; Zhang, Y ; Guo, YF
刊名	CHINESE PHYSICS LETTERS
	2010
卷号	27 期号:7
关键词	ELECTRON DEPOSITION TECHNIQUE SCHOTTKY DIODES SRTIO3
ISSN号	0256-307X
通讯作者	Chen, LM: Zhengzhou Inst Aeronaut Ind Management, Zhengzhou 450015, Henan, Peoples R China.
中文摘要	In this work, p-n junctions are made from directly depositing optimal doped La1.85Sr0.15CuO4 (LSCO) films on n-type Nb-doped SrTiO3 substrates. Film thickness controlled rectifying behaviors are strikingly displayed. The starting points of the diffusion voltage reduction Vd-on change clearly with varying film thickness Vd-on and T-C coincide with each other when the film thickness is larger than 300 nm, indicating a close relation between the two parameters. However, when the film is very thin (< 350 nm) a departure between the two parameters was also observed. A possible reason for this is discussed within the framework of an inhomogeneous Schottky contact. Enhanced interface inhomogeneity due to the tensile strain appears to be the origin.
收录类别	SCI
资助信息	Key Project Foundation of Science and Technology of He'nan Province [092102210166]; Natural Science Foundation of He'nan Provincial Educational Department [2008A140013, 2010B140015]
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/38192]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Chen, LM,Li, GC,Zhang, Y,et al. Film Thickness Dependence of Rectifying Properties of La1.85Sr0.15CuO4/Nb-SrTiO3 Junctions[J]. CHINESE PHYSICS LETTERS,2010,27(7).
APA	Chen, LM,Li, GC,Zhang, Y,&Guo, YF.(2010).Film Thickness Dependence of Rectifying Properties of La1.85Sr0.15CuO4/Nb-SrTiO3 Junctions.CHINESE PHYSICS LETTERS,27(7).
MLA	Chen, LM,et al."Film Thickness Dependence of Rectifying Properties of La1.85Sr0.15CuO4/Nb-SrTiO3 Junctions".CHINESE PHYSICS LETTERS 27.7(2010).