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Field sensing in MgO double barrier magnetic tunnel junctions with a superparamagnetic Co50Fe50 free layer
Yu, GQ ; Feng, JF ; Kurt, H ; Liu, HF ; Han, XF ; Coey, JMD
刊名JOURNAL OF APPLIED PHYSICS
2012
卷号111期号:11
关键词ROOM-TEMPERATURE MAGNETORESISTANCE
ISSN号0021-8979
通讯作者Han, XF: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要Linear response and low frequency noise have been investigated in MgO double barrier magnetic tunnel junctions with a superparamagnetic Co50Fe50 free layer. Linear and hysteresis-free switching was observed for the Co50Fe50 thickness t <= 1 nm. A tunneling magnetoresistance ratio of up to 108% and large magnetic field sensitivity value of 61%/mT were obtained at room temperature when t = 1.0 nm. The angular dependence of magnetoresistance suggests that weak coupling between superparamagnetic islands in a 1.0 nm free layer permits continuous rotation of magnetization, whereas the islands in a 0.8 nm layer switch rather independently. The frequency dependence of noise power spectrum density and field dependence of Hooge parameter (alpha) also behave differently for junctions with 0.8 and 1.0 nm free layers. The noise sensitivity of 1.0 nm free layer junctions is independent of bias, and it is estimated to reach 400 pT/Hz 0.5 at 500 kHz. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4723836]
收录类别SCI
语种英语
公开日期2013-09-17
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/38169]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Yu, GQ,Feng, JF,Kurt, H,et al. Field sensing in MgO double barrier magnetic tunnel junctions with a superparamagnetic Co50Fe50 free layer[J]. JOURNAL OF APPLIED PHYSICS,2012,111(11).
APA Yu, GQ,Feng, JF,Kurt, H,Liu, HF,Han, XF,&Coey, JMD.(2012).Field sensing in MgO double barrier magnetic tunnel junctions with a superparamagnetic Co50Fe50 free layer.JOURNAL OF APPLIED PHYSICS,111(11).
MLA Yu, GQ,et al."Field sensing in MgO double barrier magnetic tunnel junctions with a superparamagnetic Co50Fe50 free layer".JOURNAL OF APPLIED PHYSICS 111.11(2012).
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