Fabrication of pinned magnetic tunnel junctions using a contact shadow mask method

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	Fabrication of pinned magnetic tunnel junctions using a contact shadow mask method
	You, C ; Zhao, YP ; Jin, EJ ; Li, FF ; Wang, TX ; Zeng, ZM ; Peng, ZL
刊名	ACTA PHYSICA SINICA
	2004
卷号	53 期号:8 页码:2741
关键词	CO75FE25 FERROMAGNETIC ELECTRODES LARGE MAGNETORESISTANCE FILMS TEMPERATURE DEPENDENCE FIELD AL
ISSN号	1000-3290
通讯作者	You, C: Tianjin Univ Technol, Dept Mat Sci & Engn, Tianjin 300191, Peoples R China.
中文摘要	Four types of pinned magnetic tunnel junctions (MTJs) with three-key-layer structures of Py/Al2O3/Py, Py/Al2O3/Co, Co/Al2O3/Py, Co/Al2O3/Co were fabricated using a contact shadow mask method and an antiferromagnetically pinned layer of Ir-22 Mn-78. The slit width of the shadow mask is 100 mum, and the composition of permalloy is Py = Ni-79 Fe-21. For example, the MTJs of Co/Al2O3/Co with a tunneling magnetoresistance (TMR) ratio of 17.2%, the junction resistance of 76 Omega, the resistance-area product RS of 760 kOmegamum(2), and the free-layer reversal field of 1114 A (.) m(-1) defined as the field where the TMR rises to 50% of the total jump were achieved at the as-deposited state at room temperature. Furthermore, when the magnetic field increases from 0 to 1114 A (.) m(-1) the TMR ratio jumps from 0 to 17.2% with one step, which shows that the magnetic field sensitivity of the junction reached at 0.1%/(10(3) A (.) m(-1)). While, the TMR vs external filed H curves for the pinned MTJs of Co/Al2O3/Py show a good rectangular shape with a small free-layer reversal filed of 1114 A (.) m(-1). Our experimental results show that such MTJs can be used to fabricate the magnetic field sensitive sensors or prototype demonstration devices of magnetoresistive random access memory.
收录类别	SCI
语种	中文
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/37949]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	You, C,Zhao, YP,Jin, EJ,et al. Fabrication of pinned magnetic tunnel junctions using a contact shadow mask method[J]. ACTA PHYSICA SINICA,2004,53(8):2741.
APA	You, C.,Zhao, YP.,Jin, EJ.,Li, FF.,Wang, TX.,...&Peng, ZL.(2004).Fabrication of pinned magnetic tunnel junctions using a contact shadow mask method.ACTA PHYSICA SINICA,53(8),2741.
MLA	You, C,et al."Fabrication of pinned magnetic tunnel junctions using a contact shadow mask method".ACTA PHYSICA SINICA 53.8(2004):2741.