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Fabrication and field emission properties of boron nanowire bundles
Liu, F ; Liang, WJ ; Su, ZJ ; Xia, JX ; Deng, SZ ; Chen, J ; She, JC ; Xu, NS ; Tian, JF ; Shen, CM ; Gao, HJ
刊名ULTRAMICROSCOPY
2009
卷号109期号:5页码:447
关键词ELECTRON-EMISSION ARRAYS TRANSPORT
ISSN号0304-3991
通讯作者Xu, NS: Sun Yat Sen Univ, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China.
中文摘要The effects of 300 keV O-2(+) ion irradiation on the temperature and magnetic field dependence of the critical current density (J(C)) in high quality epitaxial MgB2 thin films have been studied. Upon irradiation, the critical temperature T-C drops gradually and ultimately to less than 2 K and the residual resistivity increases from about 1 to 125 mu Omega cm with increasing doses. At a moderate radiation level of 1 x 1013 cm(-2), JC is enhanced and its performance in magnetic fields is significantly improved over a certain range of fields applied along the c-axis. The scaling behavior of reduced pinning force with reduced field reveals that the flux pinning mechanism evolves from grain-boundary-like pinning in the pristine and lightly irradiated films, to point-like pinning in moderately irradiated films, and again to grain-boundary-like pinning in heavily irradiated films. It is then concluded that point-like pinning centers, which can be modified by the damage level, have been introduced after oxygen ion irradiation.
收录类别SCI
语种英语
公开日期2013-09-17
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/37884]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Liu, F,Liang, WJ,Su, ZJ,et al. Fabrication and field emission properties of boron nanowire bundles[J]. ULTRAMICROSCOPY,2009,109(5):447.
APA Liu, F.,Liang, WJ.,Su, ZJ.,Xia, JX.,Deng, SZ.,...&Gao, HJ.(2009).Fabrication and field emission properties of boron nanowire bundles.ULTRAMICROSCOPY,109(5),447.
MLA Liu, F,et al."Fabrication and field emission properties of boron nanowire bundles".ULTRAMICROSCOPY 109.5(2009):447.
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