Evidence for a Crucial Role Played by Oxygen Vacancies in LaMnO3 Resistive Switching Memories

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	Evidence for a Crucial Role Played by Oxygen Vacancies in LaMnO3 Resistive Switching Memories
	Xu, ZT ; Jin, KJ ; Gu, L ; Jin, YL ; Ge, C ; Wang, C ; Guo, HZ ; Lu, HB ; Zhao, RQ ; Yang, GZ
刊名	SMALL
	2012
卷号	8 期号:8 页码:1279
关键词	TRANSITION-METAL OXIDES ELECTRONIC-STRUCTURE DOPED SRTIO3 FILMS RESISTANCE DEVICES NONSTOICHIOMETRY MICROSCOPY REDUCTION BEHAVIOR
ISSN号	1613-6810
通讯作者	Jin, KJ: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China.
中文摘要	LaMnO3 (LMO) films are deposited on SrTiO3:Nb (0.8 wt%) substrates under various oxygen pressures to obtain different concentrations of oxygen vacancies in the films. The results of X-ray diffraction verify that with a decrease of the oxygen pressure, the c-axis lattice constant of the LMO films becomes larger, owing to an increase of the oxygen vacancies. Aberration-corrected annular-bright-field scanning transmission electron microscopy with atomic resolution and sensitivity for light elements is used, which clearly shows that the number of oxygen vacancies increases with the decrease of oxygen pressure during fabrication. Correspondingly, the resistive switching property becomes more pronounced with more oxygen vacancies in the LMO films. Furthermore, a numerical model based on the modification of the interface property induced by the migration of oxygen vacancies in these structures is proposed to elucidate the underlying physical origins. The calculated results are in good agreement with the experimental data, which reveal from a theoretical point of view that the migration of oxygen vacancies and the variation of the Schottky barrier at the interface with applied bias dominate the resistive switching characteristic. It is promising that the resistive switching property in perovskite oxides can be manipulated by controlling the oxygen vacancies during fabrication or later annealing in an oxygen atmosphere.
收录类别	SCI
资助信息	National Basic Research Program of China [2012CB921403]; National Natural Science Foundation of China [10825418, 11134012]
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/37598]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Xu, ZT,Jin, KJ,Gu, L,et al. Evidence for a Crucial Role Played by Oxygen Vacancies in LaMnO3 Resistive Switching Memories[J]. SMALL,2012,8(8):1279.
APA	Xu, ZT.,Jin, KJ.,Gu, L.,Jin, YL.,Ge, C.,...&Yang, GZ.(2012).Evidence for a Crucial Role Played by Oxygen Vacancies in LaMnO3 Resistive Switching Memories.SMALL,8(8),1279.
MLA	Xu, ZT,et al."Evidence for a Crucial Role Played by Oxygen Vacancies in LaMnO3 Resistive Switching Memories".SMALL 8.8(2012):1279.