Enhanced electron emission from diamond film deposited on pre-seeded Si substrate with nanosized diamond power

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	Enhanced electron emission from diamond film deposited on pre-seeded Si substrate with nanosized diamond power
	Gu, CZ
刊名	IVESC2004: THE 5TH INTERNATIONAL VACUUM ELECTRON SOURCES CONFERENCE PROCEEDINGS
	2004
页码	248
关键词	MECHANISM CATHODES
通讯作者	Gu, CZ: Chinese Acad Sci, Inst Phys, Lab Microfabricat, Beijing 100080, Peoples R China.
中文摘要	Diamond film was synthesized by microwave plasma chemical vapor deposition (MWPCVD) method. A three-step deposition process of diamond film was using on 4-inch pre-seeded mirror polished silicon wafer. Scanning electron microscopy (SEM), Raman spectroscopy and in-situ stress measured were employed to characterize the structure and property of diamond film. The electron emission from large area diamond film was described and compared with that from diamond film deposited on Si substrate scratched by diamond powder, the results suggested that low-field electron emission and high emission current can be obtained from the diamond film deposited on seeded substrate.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/37514]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Gu, CZ. Enhanced electron emission from diamond film deposited on pre-seeded Si substrate with nanosized diamond power[J]. IVESC2004: THE 5TH INTERNATIONAL VACUUM ELECTRON SOURCES CONFERENCE PROCEEDINGS,2004:248.
APA	Gu, CZ.(2004).Enhanced electron emission from diamond film deposited on pre-seeded Si substrate with nanosized diamond power.IVESC2004: THE 5TH INTERNATIONAL VACUUM ELECTRON SOURCES CONFERENCE PROCEEDINGS,248.
MLA	Gu, CZ."Enhanced electron emission from diamond film deposited on pre-seeded Si substrate with nanosized diamond power".IVESC2004: THE 5TH INTERNATIONAL VACUUM ELECTRON SOURCES CONFERENCE PROCEEDINGS (2004):248.