Epitaxial graphene on 4H-SiC by pulsed electron irradiation

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	Epitaxial graphene on 4H-SiC by pulsed electron irradiation
	Huang, QS ; Chen, XL ; Liu, J ; Wang, WJ ; Wang, G ; Wang, WY ; Yang, R ; Liu, Y ; Guo, LW
刊名	CHEMICAL COMMUNICATIONS
	2010
卷号	46 期号:27 页码:4917
关键词	RAMAN-SPECTROSCOPY LAYER GRAPHENE SINGLE-LAYER CARBON DYNAMICS SURFACE FILMS
ISSN号	1359-7345
通讯作者	Chen, XL: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100083, Peoples R China.
中文摘要	Controlled sublimation of silicon on a SiC surface based on pulsed electron irradiation (PEI) is presented as an effective route to quality graphene. The PEI allows us to obtain graphene in millimetre-scale within three monolayers, and is a potential candidate for preparing high quality large graphene with controlled layers.
收录类别	SCI
资助信息	Knowledge Innovation Engineering of Chinese Academy of Sciences [KJCX2-YW-W22, YYYJ-0701]; National Natural Science Foundation of China [50972162, 50702073]
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/37485]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Huang, QS,Chen, XL,Liu, J,et al. Epitaxial graphene on 4H-SiC by pulsed electron irradiation[J]. CHEMICAL COMMUNICATIONS,2010,46(27):4917.
APA	Huang, QS.,Chen, XL.,Liu, J.,Wang, WJ.,Wang, G.,...&Guo, LW.(2010).Epitaxial graphene on 4H-SiC by pulsed electron irradiation.CHEMICAL COMMUNICATIONS,46(27),4917.
MLA	Huang, QS,et al."Epitaxial graphene on 4H-SiC by pulsed electron irradiation".CHEMICAL COMMUNICATIONS 46.27(2010):4917.