Enhanced resistance switching stability of transparent ITO/TiO2/ITO sandwiches

CORC > 物理研究所 > 物理所公开发表论文 > 期刊论文

	Enhanced resistance switching stability of transparent ITO/TiO2/ITO sandwiches
	Meng, Y ; Zhang, PJ ; Liu, ZY ; Liao, ZL ; Pan, XY ; Liang, XJ ; Zhao, HW ; Chen, DM
刊名	CHINESE PHYSICS B
	2010
卷号	19 期号:3
ISSN号	1674-1056
通讯作者	Zhao, HW: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要	We report that fully transparent resistive random access memory (TRRAM) devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stability. In the visible region (400-800 nm in wavelength) the TRRAM device has a transmittance of more than 80%. The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage, while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability. The mechanism of resistance switching is further explained by the forming and rupture processes of the. lament in the TiO2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.
收录类别	SCI
资助信息	National Basic Research Program of China [2007CB925002]; National High Technology Research and Development Program of China [2008AA031401]; Chinese Academy of Sciences
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/37385]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Meng, Y,Zhang, PJ,Liu, ZY,et al. Enhanced resistance switching stability of transparent ITO/TiO2/ITO sandwiches[J]. CHINESE PHYSICS B,2010,19(3).
APA	Meng, Y.,Zhang, PJ.,Liu, ZY.,Liao, ZL.,Pan, XY.,...&Chen, DM.(2010).Enhanced resistance switching stability of transparent ITO/TiO2/ITO sandwiches.CHINESE PHYSICS B,19(3).
MLA	Meng, Y,et al."Enhanced resistance switching stability of transparent ITO/TiO2/ITO sandwiches".CHINESE PHYSICS B 19.3(2010).