Enhanced extrinsic magnetoresistance in La2/3Sr1/3MnO3 articial grain boundaries induced by ion implantation

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	Enhanced extrinsic magnetoresistance in La2/3Sr1/3MnO3 articial grain boundaries induced by ion implantation
	Zhang, MJ ; Li, J ; Peng, ZH ; Li, SL ; Zheng, DN ; Jin, AZ ; Gu, CZ ; Li, RY ; Liu, CC
刊名	JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
	2007
卷号	316 期号:1 页码:L1
ISSN号	0304-8853
中文摘要	The resistance of polycrystalline divalent-ion-doped LaMnO3 has been shown to be highly sensitive to low magnetic fields. To enable direct study of the properties of isolated grain boundaries, we developed a new method to form artificial boundaries in manganite thin films. Metal slits about 70nm in width were printed by 30KV focused Ga ion beam nanolithography on a 4 mu m La2/3Sr1/3MnO3 bridge, and the materials in these slits were then irradiated by accelerated H-2(+) ions. Using this method, magnetoresistance (MR) > 8% and > 16% were, respectively, obtained at 150 and at 10K in a magnetic field of 1T. This technique is very promising in terms of its simplicity and flexibility of fabrication and has the potential for high-density integration. (c) 2007 Elsevier B.V. All rights reserved.
收录类别	SCI
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/37348]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Zhang, MJ,Li, J,Peng, ZH,et al. Enhanced extrinsic magnetoresistance in La2/3Sr1/3MnO3 articial grain boundaries induced by ion implantation[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,2007,316(1):L1.
APA	Zhang, MJ.,Li, J.,Peng, ZH.,Li, SL.,Zheng, DN.,...&Liu, CC.(2007).Enhanced extrinsic magnetoresistance in La2/3Sr1/3MnO3 articial grain boundaries induced by ion implantation.JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,316(1),L1.
MLA	Zhang, MJ,et al."Enhanced extrinsic magnetoresistance in La2/3Sr1/3MnO3 articial grain boundaries induced by ion implantation".JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 316.1(2007):L1.