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Enhanced dielectric properties of Mn doped Ba0.6Sr0.4TiO3 thin films fabricated by pulsed laser deposition
Zhu, XH ; Zheng, DN ; Peng, W ; Li, J ; Chen, YF
刊名MATERIALS LETTERS
2006
卷号60期号:9-10页码:1224
关键词ELECTRICAL-PROPERTIES HETEROSTRUCTURES IMPROVEMENT MICROSCOPE TUNABILITY SRRUO3
ISSN号0167-577X
通讯作者Zhu, XH: Chinese Acad Sci, Inst Phys, Natl Lab Superconduct, Beijing 100080, Peoples R China.
中文摘要Pure and 2 mol% Mn doped Ba0.6Sr0.4TiO3 (BST) thin films have been deposited on La0.67Sr0.33MnO3 (LSMO) coated single-crystal (001) oriented LaA103 substrates using pulsed-laser deposition technique. The bilayer films of BST and LSMO were epitaxially grown in pure single-oriented perovskite phases for both samples, and an enhanced crystallization effect in the BST film was obtained by the addition of Mn, which were confirmed by X-ray diffraction (XRD) and in situ reflective high energy electron diffraction (RHEED) analyses. The dielectric properties of the BST thin films were measured at 100 kHz and 300 K with a parallel-plate capacitor configuration. The results have revealed that an appropriate concentration acceptor doping is very effective to increase dielectric tunability, and to reduce loss tangent and leakage current of BST thin films. The figure-of-merit (FOM) factor value increases from 11 (undoped) to 40 (Mn doped) under an applied electric field of 200 W/cm. The leakage current density of the BST thin films at a negative bias field of 200 kV/cm decreases from 2.5 x 10(-4) A/cm(2) to 1.1 X 10(-6) A/cm(2) by Mn doping. Furthermore, a scanning-tip microwave near-field microscope has been employed to study the local microwave dielectric properties of the BST thin films at 2.48 GHz. The Mn doped BST film is more homogeneous, demonstrating its more potential applications in tunable microwave devices. (c) 2005 Elsevier B.V All rights reserved.
收录类别SCI
语种英语
公开日期2013-09-17
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/37338]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Zhu, XH,Zheng, DN,Peng, W,et al. Enhanced dielectric properties of Mn doped Ba0.6Sr0.4TiO3 thin films fabricated by pulsed laser deposition[J]. MATERIALS LETTERS,2006,60(9-10):1224.
APA Zhu, XH,Zheng, DN,Peng, W,Li, J,&Chen, YF.(2006).Enhanced dielectric properties of Mn doped Ba0.6Sr0.4TiO3 thin films fabricated by pulsed laser deposition.MATERIALS LETTERS,60(9-10),1224.
MLA Zhu, XH,et al."Enhanced dielectric properties of Mn doped Ba0.6Sr0.4TiO3 thin films fabricated by pulsed laser deposition".MATERIALS LETTERS 60.9-10(2006):1224.
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