Effects of ZnO interlayers on thick GaN/Si film prepared by RF magnetron sputtering

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	Effects of ZnO interlayers on thick GaN/Si film prepared by RF magnetron sputtering
	Zhang, CG ; Blan, LF ; Chen, WD ; Hsu, CC
刊名	JOURNAL OF CRYSTAL GROWTH
	2006
卷号	293 期号:2 页码:258
关键词	TEMPERATURE ALN INTERLAYER DOPED GALLIUM NITRIDE INFRARED ELECTROLUMINESCENCE SI(111) SUBSTRATE ROOM-TEMPERATURE PHOTOLUMINESCENCE ER EU
ISSN号	0022-0248
通讯作者	Zhang, CG: Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, POB 912, Beijing 100083, Peoples R China.
中文摘要	We have successfully prepared a high-quality 2 mu m-thick GaN film with three inserted 30 nm-thick ZnO interlayers on Si (111) substrate without cracks by magnetron sputtering. The effects of the thickness and number of ZnO interlayers on the crystal quality of the GaN films were studied. It was found that the GaN crystal quality initially improved with the increase of the thickness of ZnO interlayers, but deteriorated quickly when the thickness exceeded 30 nm. Multiple ZnO interlayers were used as an effective means to further improve the crystal quality of the GaN film. By increasing the number of interlayers up to three, the cracks can be constrained to a certain extent, and the crystal quality of the GaN film greatly improved. (c) 2006 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/36838]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Zhang, CG,Blan, LF,Chen, WD,et al. Effects of ZnO interlayers on thick GaN/Si film prepared by RF magnetron sputtering[J]. JOURNAL OF CRYSTAL GROWTH,2006,293(2):258.
APA	Zhang, CG,Blan, LF,Chen, WD,&Hsu, CC.(2006).Effects of ZnO interlayers on thick GaN/Si film prepared by RF magnetron sputtering.JOURNAL OF CRYSTAL GROWTH,293(2),258.
MLA	Zhang, CG,et al."Effects of ZnO interlayers on thick GaN/Si film prepared by RF magnetron sputtering".JOURNAL OF CRYSTAL GROWTH 293.2(2006):258.