EFFECTS OF ION-BEAM DEFECT ENGINEERING ON CARRIER CONCENTRATION PROFILES IN 50-KEV P+-IMPLANTED SI(100)

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	EFFECTS OF ION-BEAM DEFECT ENGINEERING ON CARRIER CONCENTRATION PROFILES IN 50-KEV P+-IMPLANTED SI(100)
	ZHAO, QT ; WANG, ZL ; XU, TB ; ZHU, PR ; ZHOU, JS
刊名	APPLIED PHYSICS LETTERS
	1993
卷号	62 期号:24 页码:3183
关键词	ANOMALOUS DIFFUSION BORON-DIFFUSION SILICON REDUCTION
ISSN号	0003-6951
通讯作者	ZHAO, QT: BEIJING UNIV,INST MICROELECTR,BEIJING 100871,PEOPLES R CHINA.
中文摘要	Shallower carrier concentration profiles in 50 keV P+-implanted Si(100) after annealing at 1000-degrees-C for 1 h have been observed when a buried amorphous layer was formed by an additional irradiation of 1.0 MeV Si+ ions prior to annealing (i.e., ion beam defect engineering process). The secondary defects formed in the MeV Si+ damaged region act as gettering sites for the collection of interstitials from the shallower depths which are responsible for the transient diffusion of P, and therefore the transient diffusion of P is reduced and the carrier concentration profiles become shallower.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/36750]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	ZHAO, QT,WANG, ZL,XU, TB,et al. EFFECTS OF ION-BEAM DEFECT ENGINEERING ON CARRIER CONCENTRATION PROFILES IN 50-KEV P+-IMPLANTED SI(100)[J]. APPLIED PHYSICS LETTERS,1993,62(24):3183.
APA	ZHAO, QT,WANG, ZL,XU, TB,ZHU, PR,&ZHOU, JS.(1993).EFFECTS OF ION-BEAM DEFECT ENGINEERING ON CARRIER CONCENTRATION PROFILES IN 50-KEV P+-IMPLANTED SI(100).APPLIED PHYSICS LETTERS,62(24),3183.
MLA	ZHAO, QT,et al."EFFECTS OF ION-BEAM DEFECT ENGINEERING ON CARRIER CONCENTRATION PROFILES IN 50-KEV P+-IMPLANTED SI(100)".APPLIED PHYSICS LETTERS 62.24(1993):3183.