Effect of Contact Mode on the Electrical Transport and Field-Emission Performance of Individual Boron Nanowires

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	Effect of Contact Mode on the Electrical Transport and Field-Emission Performance of Individual Boron Nanowires
	Liu, F ; Su, ZJ ; Li, L ; Mo, FY ; Jin, SY ; Deng, SZ ; Chen, J ; Shen, CM ; Gao, HJ ; Xu, NS
刊名	ADVANCED FUNCTIONAL MATERIALS
	2010
卷号	20 期号:12 页码:1994
关键词	CHEMICAL-VAPOR-DEPOSITION INSULATOR-METAL SYSTEMS CARBON NANOTUBES ELECTRONIC-STRUCTURE NITRIDE NANOTUBES GROWTH NANOPARTICLES NANOCONES BEHAVIOR ARRAYS
ISSN号	1616-301X
通讯作者	Liu, F: Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol Guangdong P, Key Lab Display Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China.
中文摘要	Vapor-liquid-solid processing of boron nanowires (BNWs) can be carried out either using a bottom-up or top-down growth mode, which results in different contact modes between the nanowire and the substrate. The contact mode may strongly affect the electrical transport and field-emission performance of the individual boron nanowires grown on a Si substrate. The electrical transport and field-emission characteristics of individual boron nanowires of different contact modes are investigated in situ using a scanning electron microscope. The contact barriers are very distinct for the different contact modes. Moreover, the transition from a "contact-limited" to a "bulk-limited" field-emission (FE) process is demonstrated in nanoemitters for the first time, and the proposed improved metal-insulator-vacuum (MIV) model may better illustrate the nonlinear behavior of the Fowler-Nordheim (FN) plots in these nanoscale systems. Individual BNWs with different contact modes have a discrepancy in their emission stability and vacuum breakdown characteristics though they have similar aspect ratios, which suggests that their electrical transport and field-emission performance are closely related to their contact mode. Boron nanowires grown in the base-up mode have better field-emission performances and are more beneficial than those grown in the top-down mode for various device applications.
收录类别	SCI
资助信息	National Basic Research Program of China (973 Program, 863 Program) [2007CB935500, 2007AA03Z305, 50802117]; National Joint Science Fund of the Guangdong Province [U0634002, U0734003]; Foundation of Education Ministry of China [20070558063, 09lgpy28]; Science and Technology Department of Guangdong Province; Education Department of Guangdong Province; Science and Technology Department of Guangzhou City
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/36389]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Liu, F,Su, ZJ,Li, L,et al. Effect of Contact Mode on the Electrical Transport and Field-Emission Performance of Individual Boron Nanowires[J]. ADVANCED FUNCTIONAL MATERIALS,2010,20(12):1994.
APA	Liu, F.,Su, ZJ.,Li, L.,Mo, FY.,Jin, SY.,...&Xu, NS.(2010).Effect of Contact Mode on the Electrical Transport and Field-Emission Performance of Individual Boron Nanowires.ADVANCED FUNCTIONAL MATERIALS,20(12),1994.
MLA	Liu, F,et al."Effect of Contact Mode on the Electrical Transport and Field-Emission Performance of Individual Boron Nanowires".ADVANCED FUNCTIONAL MATERIALS 20.12(2010):1994.