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Direct observation of local resistance switching in WO3 films
Dong, CY ; Shi, L ; Shang, DS ; Chen, W ; Wang, J ; Shen, BG ; Sun, JR
刊名JOURNAL OF PHYSICS D-APPLIED PHYSICS
2011
卷号44期号:20
关键词OXIDE-FILMS TUNGSTEN MEMORIES
ISSN号0022-3727
通讯作者Dong, CY: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要Local resistance switching in WO3 films has been studied based on the conducting atomic force microscope technique. Special attention was paid to the formation/reproducibility of local conduction regions on the metal-oxide interface for repeated setting-resetting operations and the effects of microscopic inhomogeneity. It is found that most of the conducting spots prefer to stay where they were once formed. However, only a minority of them (similar to 30%) are repeatable in resistance values for the writing-erasing cycling. According to the resistance switching behaviours, five kinds of locations can be classified in total, and they are inactive regions, weak transition regions, weak to stable transition regions, stable transition regions and irregular transition regions. A further analysis shows the preferential locations of conduction spots at protuberant grains.
收录类别SCI
资助信息National Basic Research of China; National Natural Science Foundation of China; Chinese Academy of Science; Beijing Municipal Nature Science Foundation
语种英语
公开日期2013-09-17
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/36057]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Dong, CY,Shi, L,Shang, DS,et al. Direct observation of local resistance switching in WO3 films[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(20).
APA Dong, CY.,Shi, L.,Shang, DS.,Chen, W.,Wang, J.,...&Sun, JR.(2011).Direct observation of local resistance switching in WO3 films.JOURNAL OF PHYSICS D-APPLIED PHYSICS,44(20).
MLA Dong, CY,et al."Direct observation of local resistance switching in WO3 films".JOURNAL OF PHYSICS D-APPLIED PHYSICS 44.20(2011).
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