Direct observation of local resistance switching in WO3 films | |
Dong, CY ; Shi, L ; Shang, DS ; Chen, W ; Wang, J ; Shen, BG ; Sun, JR | |
刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
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2011 | |
卷号 | 44期号:20 |
关键词 | OXIDE-FILMS TUNGSTEN MEMORIES |
ISSN号 | 0022-3727 |
通讯作者 | Dong, CY: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
中文摘要 | Local resistance switching in WO3 films has been studied based on the conducting atomic force microscope technique. Special attention was paid to the formation/reproducibility of local conduction regions on the metal-oxide interface for repeated setting-resetting operations and the effects of microscopic inhomogeneity. It is found that most of the conducting spots prefer to stay where they were once formed. However, only a minority of them (similar to 30%) are repeatable in resistance values for the writing-erasing cycling. According to the resistance switching behaviours, five kinds of locations can be classified in total, and they are inactive regions, weak transition regions, weak to stable transition regions, stable transition regions and irregular transition regions. A further analysis shows the preferential locations of conduction spots at protuberant grains. |
收录类别 | SCI |
资助信息 | National Basic Research of China; National Natural Science Foundation of China; Chinese Academy of Science; Beijing Municipal Nature Science Foundation |
语种 | 英语 |
公开日期 | 2013-09-17 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/36057] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Dong, CY,Shi, L,Shang, DS,et al. Direct observation of local resistance switching in WO3 films[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(20). |
APA | Dong, CY.,Shi, L.,Shang, DS.,Chen, W.,Wang, J.,...&Sun, JR.(2011).Direct observation of local resistance switching in WO3 films.JOURNAL OF PHYSICS D-APPLIED PHYSICS,44(20). |
MLA | Dong, CY,et al."Direct observation of local resistance switching in WO3 films".JOURNAL OF PHYSICS D-APPLIED PHYSICS 44.20(2011). |
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