DIAMOND GROWTH ON POROUS SILICON BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION

CORC > 物理研究所 > 物理所公开发表论文 > 期刊论文

	DIAMOND GROWTH ON POROUS SILICON BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION
	LIU, ZH ; ZONG, BQ ; LIN, ZD
刊名	THIN SOLID FILMS
	1995
卷号	254 期号:1-2 页码:3
关键词	THIN-FILMS EPITAXIAL-GROWTH NUCLEATION MICROSTRUCTURE MICROSCOPY SI
ISSN号	0040-6090
通讯作者	LIU, ZH: CHINESE ACAD SCI,INST PHYS,STATE KEY LAB SURFACE PHYS,POB 603,BEIJING 100080,PEOPLES R CHINA.
中文摘要	Diamond films have been grown on porous silicon by hot filament chemical vapor deposition. The films are characterized by scanning electron microscopy, Raman spectroscopy and X-ray diffraction analysis, showing that continuous diamond films with crystallinity are obtained on porous silicon. The demonstration of diamond growth on porous silicon seems to suggest that the nanoscale microstructures of porous silicon play an important role in nucleation and growth of diamond.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/35908]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	LIU, ZH,ZONG, BQ,LIN, ZD. DIAMOND GROWTH ON POROUS SILICON BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION[J]. THIN SOLID FILMS,1995,254(1-2):3.
APA	LIU, ZH,ZONG, BQ,&LIN, ZD.(1995).DIAMOND GROWTH ON POROUS SILICON BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION.THIN SOLID FILMS,254(1-2),3.
MLA	LIU, ZH,et al."DIAMOND GROWTH ON POROUS SILICON BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION".THIN SOLID FILMS 254.1-2(1995):3.