Design and optimization of DBR in 980 nm bottom-emitting VCSEL

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	Design and optimization of DBR in 980 nm bottom-emitting VCSEL
	Li, T ; Ning, YQ ; Hao, EJ ; Cui, JJ ; Zhang, Y ; Liu, GY ; Qin, L ; Liu, Y ; Wang, LJ ; Cui, DF ; Xu, ZY
刊名	SCIENCE IN CHINA SERIES F-INFORMATION SCIENCES
	2009
卷号	52 期号:7 页码:1266
关键词	BRAGG REFLECTORS CAVITY LASERS
ISSN号	1009-2757
通讯作者	Li, T: Chinese Acad Sci, Key Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China.
中文摘要	According to the theory of DBR, with the P-type DBR as an example, the electrical characteristics and optical reflection of the DBR are analyzed by studying the energy band structure with various graded region widths and doping densities. The width and doping density of graded region are decided through a comparative study. The P-type DBR of 980 nm VCSELs is designed with Al(0.9)Ga(0.1)As and Al(0.1)Ga(0.9)As selected as the high and low refractive index material for the DBR. The 980 nm bottom VCSELs, which consists of 30 pairs P-type DBR and 28 pairs N-type DBR, are then fabricated. In P-type DBR, the width of graded region is 0.02 mu m and the uniformity doping concentration is 2.5x10(18)cm(-3). Its reflectivity is 99.9%. In N-type DBR, the width of graded region is also 0.02 mu m and the uniformity doping concentration is 2x10(18)cm(-3). Its reflectivity is 99.3%. The I-V curve shows that the series resistance of the device is about 0.05 Omega. According to the theory of DBR, with the P-type DBR as an example, the electrical characteristics and optical reflection of the DBR are analyzed by studying the energy band structure with various graded region widths and doping densities. The width and doping density of graded region are decided through a comparative study. The P-type DBR of 980 nm VCSELs is designed, with Al(0.9)Ga(0.1)As and Al(0.1)Ga(0.9)As selected as the high and low refractive index material for the DBR. The 980 nm bottom VCSELs, which consist of 30 pairs P-type DBR and 28 pairs N-type DBR, are then fabricated. In P-type DBR, the width of graded region is 0.02 mu m and the uniformity doping concentration is 2.5x1018cm(-3). Its reflectivity is 99.9%. In N-type DBR, the width of graded region is also 0.02 mu m and the uniformity doping concentration is 2x1018cm(-3). Its reflectivity is 99.3%. The I-V curve shows that the series resistance of the device is about 0.05 Omega.
收录类别	SCI
资助信息	National Natural Science Foundation of China [60636020, 60676034, 60577003, 60706007]
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/35775]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Li, T,Ning, YQ,Hao, EJ,et al. Design and optimization of DBR in 980 nm bottom-emitting VCSEL[J]. SCIENCE IN CHINA SERIES F-INFORMATION SCIENCES,2009,52(7):1266.
APA	Li, T.,Ning, YQ.,Hao, EJ.,Cui, JJ.,Zhang, Y.,...&Xu, ZY.(2009).Design and optimization of DBR in 980 nm bottom-emitting VCSEL.SCIENCE IN CHINA SERIES F-INFORMATION SCIENCES,52(7),1266.
MLA	Li, T,et al."Design and optimization of DBR in 980 nm bottom-emitting VCSEL".SCIENCE IN CHINA SERIES F-INFORMATION SCIENCES 52.7(2009):1266.