Density-functional-theory investigation of pressure induced semiconductor-metal transitions in the ferromagnetic semiconductor HgCr2Se4

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	Density-functional-theory investigation of pressure induced semiconductor-metal transitions in the ferromagnetic semiconductor HgCr2Se4
	Guo, SD ; Liu, BG
刊名	JOURNAL OF PHYSICS-CONDENSED MATTER
	2012
卷号	24 期号:4
关键词	SPINELS MAGNETORESISTANCE
ISSN号	0953-8984
通讯作者	Guo, SD: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China.
中文摘要	Magnetic properties and magnetocaloric effects (MCEs) of the HoPdAl compounds with the hexagonal ZrNiAl-type and the orthorhombic TiNiSi-type structures are investigated. Both the compounds are found to be antiferromagnet with the N,el temperature T (N) =12 and 10 K, respectively. A field-induced metamagnetic transition from antiferromagnetic (AFM) state to ferromagnetic (FM) state is observed below T (N) . For the hexagonal HoPdAl, a small magnetic field can induce an FM-like state due to a weak AFM coupling, which leads to a high saturation magnetization and gives rise to a large MCE around T (N) . The maximal value of magnetic entropy change (Delta S (M) ) is -20.6 J/kg K with a refrigerant capacity (RC) value of 386 J/kg for a field change of 0-5 T. For the orthorhombic HoPdAl, the critical field required for metamagnetic transition is estimated to be about 1.5 T, showing a strong AFM coupling. However, the maximal Delta S (M) value is still -13.7 J/kg K around T (N) for a field change of 0-5 T. The large reversible Delta S (M) and considerable RC suggest that HoPdAl may be an appropriate candidate for magnetic refrigerant in a low temperature range.
收录类别	SCI
资助信息	Natural Science Foundation of China [11174359, 10874232, 10774180]; Chinese Department of Science and Technology [2012CB932302]
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/35729]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Guo, SD,Liu, BG. Density-functional-theory investigation of pressure induced semiconductor-metal transitions in the ferromagnetic semiconductor HgCr2Se4[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2012,24(4).
APA	Guo, SD,&Liu, BG.(2012).Density-functional-theory investigation of pressure induced semiconductor-metal transitions in the ferromagnetic semiconductor HgCr2Se4.JOURNAL OF PHYSICS-CONDENSED MATTER,24(4).
MLA	Guo, SD,et al."Density-functional-theory investigation of pressure induced semiconductor-metal transitions in the ferromagnetic semiconductor HgCr2Se4".JOURNAL OF PHYSICS-CONDENSED MATTER 24.4(2012).